Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848359 | Method of forming lateral pn junctions in III-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation | Mohammad Wahidur Rahman, Hareesh Chandrasekar | 2023-12-19 |
| 11848389 | Low turn on and high breakdown voltage lateral diode | Mohammad Wahidur Rahman | 2023-12-19 |
| 11658267 | Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency | Yuewei ZHANG, Zane JAMAL-EDDINE, Fatih AKYOL | 2023-05-23 |
| 11476340 | Dielectric heterojunction device | Zhanbo Xia, Wyatt Moore | 2022-10-18 |
| 11211525 | Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency | Yuewei ZHANG, Zane JAMAL-EDDINE, Fatih AKYOL | 2021-12-28 |
| 11081555 | Electronic devices with ultra-high dielectric constant passivation and high mobility materials | Zhanbo Xia, Caiyu Wang | 2021-08-03 |
| 9478699 | Nanoscale emitters with polarization grading | Roberto C. Myers | 2016-10-25 |
| 8697506 | Heterostructure device and associated method | Vinayak Tilak, Alexei Vertiatchikh, Kevin Sean Matocha, Peter Micah Sandvik | 2014-04-15 |
| 8159002 | Heterostructure device and associated method | Vinayak Tilak, Alexei Vertiatchikh, Kevin Sean Matocha, Peter Micah Sandvik | 2012-04-17 |
| 7948011 | N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor | Chang Soo Suh, James S. Speck, Umesh Mishra | 2011-05-24 |
| 7935985 | N-face high electron mobility transistors with low buffer leakage and low parasitic resistance | Umesh Mishra, Yi Pei, Man Hoi Wong | 2011-05-03 |
| 7525130 | Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same | Umesh Mishra, Huili Grace Xing, Debdeep Jena | 2009-04-28 |