| 12364060 |
Bottom tunnel junction light-emitting field-effect transistors |
Shyam Bharadwaj, Kevin Lee, Kazuki Nomoto, Austin Hickman, Len van Deurzen +2 more |
2025-07-15 |
| 12243921 |
Vertical gallium oxide (GA2O3) power FETs |
Zongyang Hu, Kazuki Nomoto, Grace Huili Xing, Wenshen Li |
2025-03-04 |
| 12161052 |
Expitaxial semiconductor/superconductor heterostructures |
Rusen Yan, Guru Bahadur Singh Khalsa, John J. Wright, H. Grace Xing, D. Scott Katzer +3 more |
2024-12-03 |
| 12051474 |
Resistive electrodes on ferroelectric devices for linear piezoelectric programming |
Amit Lal, Shubham Jadhav, Ved Gund, Benyamin Davaji, Grace Huili Xing |
2024-07-30 |
| 11894468 |
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same |
Wenshen Li, Zongyang Hu, Kazuki Nomoto, Huili Grace Xing |
2024-02-06 |
| 11715774 |
Vertical gallium oxide (GA2O3) power FETs |
Zongyang Hu, Kazuki Nomoto, Grace Huili Xing, Wenshen Li |
2023-08-01 |
| 11710785 |
RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages |
Austin Hickman, Reet Chaudhuri, Samuel James BADER, Huili Grace Xing |
2023-07-25 |
| 11522080 |
High-voltage p-channel FET based on III-nitride heterostructures |
Samuel James BADER, Reet Chaudhuri, Huili Grace Xing |
2022-12-06 |
| 11476383 |
Platforms enabled by buried tunnel junction for integrated photonic and electronic systems |
Henryk Turski, Huili Grace Xing, Shyam Bharadwaj, Alexander Austin Chaney, Kazuki Nomoto |
2022-10-18 |
| 11043612 |
Light emitting diodes using ultra-thin quantum heterostructures |
SM Islam, Vladimir Protasenko, Huili Grace Xing, Jai Verma |
2021-06-22 |
| 10957817 |
Polarization field assisted heterostructure design for efficient deep ultra-violet light emitting diodes |
SM Islam, Vladimir Protasenko, Huili Grace Xing |
2021-03-23 |
| 9954085 |
Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same |
Patrick Fay, Lina Cao, Wenjun Li |
2018-04-24 |
| 9905647 |
Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same |
Patrick Fay, Wenjun Li |
2018-02-27 |
| 9362389 |
Polarization induced doped transistor |
Huili (Grace) Xing, Kazuki Nomoto, Bo Song, Mingda Zhu, Zongyang Hu |
2016-06-07 |
| 8835998 |
Compositionally graded heterojunction semiconductor device and method of making same |
John David Simon, Huili (Grace) Xing |
2014-09-16 |
| 8836446 |
Methods and apparatus for terahertz wave amplitude modulation |
Berardi Sensale-Rodriguez, Huili (Grace) Xing, Rusen Yan, Michelle Kelly, Tian Fang +1 more |
2014-09-16 |
| 7525130 |
Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same |
Umesh Mishra, Huili Grace Xing, Siddharth Rajan |
2009-04-28 |
