SY

Shaofeng Yu

TI Texas Instruments: 32 patents #293 of 12,488Top 3%
IN Intel: 11 patents #3,700 of 30,777Top 15%
S( Semiconductor Manufacturing International (Shanghai): 6 patents #97 of 1,122Top 9%
S( Semiconductor Manufacturing International (Beijing): 1 patents #301 of 689Top 45%
SC State Grid Zhejiang Electric Power Co.: 1 patents #1 of 81Top 2%
WM Worldwide Semiconductor Manufacturing: 1 patents #40 of 87Top 50%
📍 Dahe, TX: #1 of 1 inventorsTop 100%
Overall (All Time): #49,231 of 4,157,543Top 2%
53
Patents All Time

Issued Patents All Time

Showing 26–50 of 53 patents

Patent #TitleCo-InventorsDate
7892908 Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates Angelo Pinto, Frank Scott Johnson, Benjamin P. McKee 2011-02-22
7871916 Transistor gate electrode having conductor material layer Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin +1 more 2011-01-18
7855111 Border region defect reduction in hybrid orientation technology (HOT) direct silicon bonded (DSB) substrates Haowen Bu, Angelo Pinto, Ajith Varghese 2010-12-21
7838356 Gate dielectric first replacement gate processes and integrated circuits therefrom Brian K. Kirkpatrick, Freidoon Mehrad 2010-11-23
7785970 Method of forming source and drain regions utilizing dual capping layers and split thermal processes Frank Scott Johnson 2010-08-31
7727842 Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device Freidoon Mehrad, Steven A. Vitale, Joe G. Tran 2010-06-01
7692258 Photosensitive device Miriam Reshotko, Bruce A. Block 2010-04-06
7687396 Method of forming silicided gates using buried metal layers Steven A. Vitale 2010-03-30
7642610 Transistor gate electrode having conductor material layer Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin +1 more 2010-01-05
7585738 Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device Freidoon Mehrad, Jiong-Ping Lu 2009-09-08
7547596 Method of enhancing drive current in a transistor Mark Visokay 2009-06-16
7435638 Dual poly deposition and through gate oxide implants Shyh-Horng Yang 2008-10-14
7416949 Fabrication of transistors with a fully silicided gate electrode and channel strain Michael F. Pas 2008-08-26
7396716 Method to obtain fully silicided poly gate Freidoon Mehrad, Joe G. Tran 2008-07-08
7341933 Method for manufacturing a silicided gate electrode using a buffer layer Haowen Bu, Jiong-Ping Lu, Lindsey Hall 2008-03-11
7338888 Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same Jiong-Ping Lu, Haowen Bu, Ping Jiang 2008-03-04
7253049 Method for fabricating dual work function metal gates Jiong-Ping Lu, Haowen Bu, Lindsey Hall, Mark Visokay 2007-08-07
7231463 Multi-level ring peer-to-peer network structure for peer and object discovery Gururaj Nagendra 2007-06-12
7229871 Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors Benjamin P. McKee 2007-06-12
7223679 Transistor gate electrode having conductor material layer Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin +1 more 2007-05-29
7189627 Method to improve SRAM performance and stability Zhiqiang Wu, C. Rinn Cleavelin 2007-03-13
7157358 Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same Lindsey Hall, Haowen Bu 2007-01-02
7148097 Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors Benjamin P. McKee 2006-12-12
7148143 Semiconductor device having a fully silicided gate electrode and method of manufacture therefor Haowen Bu, Jiong-Ping Lu, Ping Jiang, Clint Montgomery 2006-12-12
7084471 Photosensitive device Miriam Reshotko, Bruce A. Block 2006-08-01