Issued Patents All Time
Showing 301–325 of 337 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6004873 | Method for reducing the pattern sensitivity of ozone assisted chemical vapor deposited (CVD) silicon oxide insulator layers | Lu Liu | 1999-12-21 |
| 5972798 | Prevention of die loss to chemical mechanical polishing | Jui-Yu Chang, Chen-Hua Yu, Chung-Long Chang, Tsu Shih, Jeng-Horng Chen | 1999-10-26 |
| 5968687 | Mask for recovering alignment marks after chemical mechanical polishing | Jui-Yu Chang, Chunshing Chen, Ying-Ho Chen | 1999-10-19 |
| 5958800 | Method for post planarization metal photolithography | Chen-Hua Yu | 1999-09-28 |
| 5955787 | Method for forming intermetal dielectric with SOG etchback and CMP | Chen-Hua Yu | 1999-09-21 |
| 5923996 | Method to protect alignment mark in CMP process | Tsu Shih, Jui-Yu Chang, Chen-Hua Yu | 1999-07-13 |
| 5904573 | PE-TEOS process | Lung Chen, Chen-Hua Yu | 1999-05-18 |
| 5872042 | Method for alignment mark regeneration | Shun-Liang Hsu, Chang-Song Lin | 1999-02-16 |
| 5871886 | Sandwiched middle antireflection coating (SMARC) process | Chen-Hua Yu | 1999-02-16 |
| 5869384 | Trench filling method employing silicon liner layer and gap filling silicon oxide trench fill layer | Chen-Hua Yu, Ying-Ho Chen | 1999-02-09 |
| 5858623 | Method for attenuating photoresist layer outgassing | Chen-Hua Yu, Tsung-Hou Li | 1999-01-12 |
| 5858588 | Method for recovering alignment marks after chemical mechanical polishing | Jui-Yu Chang, Chunshing Chen, Ying-Ho Chen | 1999-01-12 |
| 5840624 | Reduction of via over etching for borderless contacts | Yu Chen-Hua Douglas | 1998-11-24 |
| 5817566 | Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration | Ying-Ho Chen, Chen-Hua Yu | 1998-10-06 |
| 5817571 | Multilayer interlevel dielectrics using phosphorus-doped glass | Chen-Hua Yu, Huang Yuan-Chang | 1998-10-06 |
| 5817567 | Shallow trench isolation method | Ying-Ho Chen, Chen-Hua Yu | 1998-10-06 |
| 5811345 | Planarization of shallow- trench- isolation without chemical mechanical polishing | Chen-Hua Yu | 1998-09-22 |
| 5804498 | Method of making an underlayer to reduce pattern sensitivity of ozone-TEOS | Lu Liu, Lung Chen | 1998-09-08 |
| 5786260 | Method of fabricating a readable alignment mark structure using enhanced chemical mechanical polishing | Ying-Ho Chen, Chung-Long Chang, Chen-Hua Yu | 1998-07-28 |
| 5773360 | Reduction of surface contamination in post-CMP cleaning | Chung-Long Chang, Chen-Hua Yu | 1998-06-30 |
| 5747380 | Robust end-point detection for contact and via etching | Chen-Hua Yu | 1998-05-05 |
| 5741740 | Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer | Ying-Ho Chen, Chen-Hua Yu | 1998-04-21 |
| 5731241 | Self-aligned sacrificial oxide for shallow trench isolation | Ying-Ho Chen, Chen-Hua Yu | 1998-03-24 |
| 5726090 | Gap-filling of O.sub.3 -TEOS for shallow trench isolation | Ying-Ho Chen, Chen-Hua Yu | 1998-03-10 |
| 5721172 | Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers | Ying-Ho Chen, Chen-Hua Yu | 1998-02-24 |