Issued Patents All Time
Showing 276–300 of 337 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6100163 | Gap filling of shallow trench isolation by ozone-tetraethoxysilane | Ying-Ho Chen, Chen-Hua Yu | 2000-08-08 |
| 6096649 | Top metal and passivation procedures for copper damascene structures | — | 2000-08-01 |
| 6093593 | Method of forming a gate which provides a reduced corner recess in adjacent shallow trench isolation | — | 2000-07-25 |
| 6090714 | Chemical mechanical polish (CMP) planarizing trench fill method employing composite trench fill layer | Chu-Yun Fu | 2000-07-18 |
| 6090696 | Method to improve the adhesion of a molding compound to a semiconductor chip comprised with copper damascene structures | Mong-Song Liang | 2000-07-18 |
| 6080656 | Method for forming a self-aligned copper structure with improved planarity | Tsu Shih, Ying-Ho Chen, Jih-Churng Twu | 2000-06-27 |
| 6080635 | Method of photo alignment for shallow trench isolation with chemical mechanical polishing | Jui-Yu Chang | 2000-06-27 |
| 6072237 | Borderless contact structure | Chen-Hua Yu | 2000-06-06 |
| 6071814 | Selective electroplating of copper for damascene process | — | 2000-06-06 |
| 6051496 | Use of stop layer for chemical mechanical polishing of CU damascene | — | 2000-04-18 |
| 6049137 | Readable alignment mark structure formed using enhanced chemical mechanical polishing | Ying-Ho Chen, Chung-Long Chang, Chen-Hua Yu | 2000-04-11 |
| 6046108 | Method for selective growth of Cu.sub.3 Ge or Cu.sub.5 Si for passivation of damascene copper structures and device manufactured thereby | Chung-Shi Liu, Chen-Hua Yu, Tien-I Bao | 2000-04-04 |
| 6043152 | Method to reduce metal damage in the HDP-CVD process by using a sacrificial dielectric film | Weng Chang | 2000-03-28 |
| 6043136 | Trench filling method employing oxygen densified gap filling CVD silicon oxide layer | Ying-Ho Chen, Chen-Hua Yu | 2000-03-28 |
| 6043133 | Method of photo alignment for shallow trench isolation chemical-mechanical polishing | Ying-Ho Chen, Jui-Yu Chang, Chen-Hua Yu | 2000-03-28 |
| 6037236 | Regeneration of alignment marks after shallow trench isolation with chemical mechanical polishing | — | 2000-03-14 |
| 6037018 | Shallow trench isolation filled by high density plasma chemical vapor deposition | Chu-Yun Fu, Chen-Hua Yu | 2000-03-14 |
| 6027861 | VLSIC patterning process | Chen-Hua Yu, Chao-Cheng Chen | 2000-02-22 |
| 6022802 | Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines | — | 2000-02-08 |
| 6019906 | Hard masking method for forming patterned oxygen containing plasma etchable layer | Ming-Hsin Huang | 2000-02-01 |
| 6020249 | Method for photo alignment after CMP planarization | Tsu Shih, Jui-Yu Chang, Chen-Hua Yu | 2000-02-01 |
| 6010948 | Shallow trench isolation process employing a BPSG trench fill | Chen-Hua Yu | 2000-01-04 |
| 6007733 | Hard masking method for forming oxygen containing plasma etchable layer | Ming-Hsin Huang | 1999-12-28 |
| 6004863 | Non-polishing sacrificial layer etchback planarizing method for forming a planarized aperture fill layer | — | 1999-12-21 |
| 6004883 | Dual damascene patterned conductor layer formation method without etch stop layer | Chen-Hua Yu | 1999-12-21 |