CL

Chang-Song Lin

TSMC: 8 patents #3,198 of 12,232Top 30%
FT Faraday Technology: 2 patents #110 of 417Top 30%
📍 Baoshan, TW: #385 of 3,661 inventorsTop 15%
Overall (All Time): #521,738 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
7464357 Integrated circuit capable of locating failure process layers An-Ru Cheng, Tzu-Chun Liu, Huan-Yung Tseng 2008-12-09
7036099 Integrated circuit capable of locating failure process layers An-Ru Cheng, Tzu-Chun Liu, Huan-Yung Tseng 2006-04-25
6753569 Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation Yai-Fen Lin, Chia-Ta Hsieh, Hung-Cheng Sung, Juang-Ke Yeh 2004-06-22
6417046 Modified nitride spacer for solving charge retention issue in floating gate memory cell Ming-Chou Ho, Wen-Ting Chu, Chuan-Li Chang, Hsin-Ming Chen, Di-Son Kuo 2002-07-09
6358796 Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation Yai-Fen Lin, Chia-Ta Hsieh, Hung-Cheng Sung, Juang-Ke Yeh 2002-03-19
6117732 Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell Wen-Ting Chu, Chuan-Li Chang, Ming-Chou Ho, Di-Son Kuo 2000-09-12
6110782 Method to combine high voltage device and salicide process Wen-Ting Chu, Chuan-Li Chang, Ming-Chon Ho, Di-Son Kwo 2000-08-29
6090668 Method to fabricate sharp tip of poly in split gate flash Yai-Fen Lin, Chia-Ta Hsieh, Hung-Cheng Sung, Jung-Ke Yeh, Di-Son Kuo 2000-07-18
5872042 Method for alignment mark regeneration Shun-Liang Hsu, Syun-Ming Jang 1999-02-16
5747382 Two-step planarization process using chemical-mechanical polishing and reactive-ion-etching Yung-Sheng Huang, Long-Sheng Yeou, Ji-Chung Huang 1998-05-05