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Method for operating one-time programmable read-only memory |
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2012-01-03 |
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Nonvolatile single-poly memory device |
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2010-08-03 |
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Method for operating single-poly non-volatile memory device |
Shih-Chen Wang, Hsin-Ming Chen, Chun-Hung Lu, Shih-Jye Shen, Ching-Hsiang Hsu |
2008-11-04 |
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Operation method of non-volatile memory |
Shih-Chen Wang, Hsin-Ming Chen, Chun-Hung Lu, Shih-Jye Shen, Ching-Hsiang Hsu |
2008-10-07 |
| 6920067 |
Integrated circuit embedded with single-poly non-volatile memory |
Ching-Hsiang Hsu, Chih-Hsun Chu, Shih-Jye Shen |
2005-07-19 |
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Semiconductor memory device having improved data retention |
Ching-Hsiang Hsu, Shih-Jye Shen |
2005-07-05 |
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Method for operating N-channel electrically erasable programmable logic device |
Kung-Hong Lee, Ching-Hsiang Hsu, Ya-Chin King, Shih-Jye Shen |
2005-01-11 |
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Cmos-compatible read only memory and method for fabricating the same |
Ching-Hsiang Hsu, Wei-Zhe Wong, Shih-Jye Shen, Hsin-Ming Chen, Shih-Chan Huang |
2004-11-23 |
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Fabrication method for non-volatile memory |
Shih-Jye Shen, Wei-Zhe Wong, Hsin-Ming Chen |
2004-11-02 |
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Method for forming EPROM with low leakage |
Ching-Hsiang Hsu, Chih-Hsun Chu, Shih-Jye Shen |
2004-05-25 |
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Electrically erasable programmable logic device |
Ching-Hsiang Hsu, Yen-Tai Lin, Chih-Hsun Chu, Shih-Jye Shen, Ching-Sung Yang |
2003-09-09 |
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Modified nitride spacer for solving charge retention issue in floating gate memory cell |
Wen-Ting Chu, Chang-Song Lin, Chuan-Li Chang, Hsin-Ming Chen, Di-Son Kuo |
2002-07-09 |
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Process for a snap-back flash EEPROM cell |
Juang-Ker Yeh, Jian-Hsing Lee, Kuo-Reay Peng |
2001-10-16 |
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Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell |
Wen-Ting Chu, Chuan-Li Chang, Chang-Song Lin, Di-Son Kuo |
2000-09-12 |
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Erase method of flash EEPROM by using snapback characteristic |
Jian-Hsing Lee, Kuo-Reay Peng, Juang-Ke Yeh |
2000-04-25 |
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Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase |
Jian-Hsing Lee, Kuo-Reay Peng, Juang-Ke Yeh |
2000-04-11 |
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Method to improve flash EEPROM cell write/erase threshold voltage closure |
Juang-Ker Yeh, Jian-Hsing Lee, Kuo-Reay Peng |
1999-09-07 |
| 5903499 |
Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase |
Kuo-Reay Peng, Jian-Hsing Lee, Juang-Ke Yeh |
1999-05-11 |
| 5862078 |
Mixed mode erase method to improve flash eeprom write/erase threshold closure |
Juang-Ker Yeh, Jian-Hsing Lee, Kuo-Reay Peng |
1999-01-19 |
| 5838618 |
Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure |
Jian-Hsing Lee, Juang-Ker Yeh, Kuo-Reay Peng |
1998-11-17 |
| 5726933 |
Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM |
Jian-Hsing Lee, Kuo-Reay Peng, Juang-Ke Yeh |
1998-03-10 |
