Issued Patents All Time
Showing 51–66 of 66 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9601411 | Semiconductor structure | Alexander Kalnitsky, Hsiao-Chin Tuan, Hsin-Li Cheng, Felix Ying-Kit Tsui | 2017-03-21 |
| 9236326 | Semiconductor structure and fabricating method thereof | Alexander Kalnitsky, Hsiao-Chin Tuan, Hsin-Li Cheng, Felix Ying-Kit Tsui | 2016-01-12 |
| 8138497 | Test structure for detecting via contact shorting in shallow trench isolation regions | Huilong Zhu, Effendi Leobandung | 2012-03-20 |
| 7816738 | Low-cost FEOL for ultra-low power, near sub-vth device structures | Brent A. Anderson, Andres Bryant, William F. Clark, Jr., Jeffrey P. Gambino, Edward J. Nowak +1 more | 2010-10-19 |
| 7666775 | Split poly-SiGe/poly-Si alloy gate stack | Kevin K. Chan, Jia-Wei Chen, Edward J. Nowak | 2010-02-23 |
| 7465649 | Method of forming a split poly-SiGe/poly-Si alloy gate stack | Kevin K. Chan, Jia Chen, Edward J. Nowak | 2008-12-16 |
| 7416986 | Test structure and method for detecting via contact shorting in shallow trench isolation regions | Huilong Zhu, Effendi Leobandung | 2008-08-26 |
| 7378336 | Split poly-SiGe/poly-Si alloy gate stack | Kevin K. Chan, Jia Chen, Edward J. Nowak | 2008-05-27 |
| 6984564 | Structure and method to improve SRAM stability without increasing cell area or off current | Clement Wann, Haining Yang | 2006-01-10 |
| 6975133 | Logic circuits having linear and cellular gate transistors | Victor Wing Chung Chan, Hsing-Jen Wann, Oleg Gluschenkov | 2005-12-13 |
| 6927454 | Split poly-SiGe/poly-Si alloy gate stack | Kevin K. Chan, Jia Chen, Edward J. Nowak | 2005-08-09 |
| 6504219 | Indium field implant for punchthrough protection in semiconductor devices | Helmut Puchner | 2003-01-07 |
| 6342429 | Method of fabricating an indium field implant for punchthrough protection in semiconductor devices | Helmut Puchner | 2002-01-29 |
| 6323106 | Dual nitrogen implantation techniques for oxynitride formation in semiconductor devices | Helmut Puchner | 2001-11-27 |
| 6156620 | Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same | Helmut Puchner, Sheldon Aronowitz | 2000-12-05 |
| 6144076 | Well formation For CMOS devices integrated circuit structures | Helmut Puchner, Ruggero Castagnetti | 2000-11-07 |