Issued Patents All Time
Showing 276–300 of 342 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508716 | Methods of manufacturing a semiconductor device | Cheng-Tung Lin, Teng-Chun Tsai, Li-Ting Wang, Chi-Yuan Chen, Kuo-Yin Lin +5 more | 2016-11-29 |
| 9502565 | Channel strain control for nonplanar compound semiconductor devices | — | 2016-11-22 |
| 9496397 | FinFet device with channel epitaxial region | Zhi-Chang Lin, Chao-Hsiung Wang, Chi-Wen Liu | 2016-11-15 |
| 9490348 | Method of forming a FinFET having an oxide region in the source/drain region | Chih-Hao Wang, Ching-Wei Tsai, Zhiqiang Wu, Jean-Pierre Colinge | 2016-11-08 |
| 9484461 | Integrated circuit structure with substrate isolation and un-doped channel | Guan-Lin Chen | 2016-11-01 |
| 9478624 | Self-aligned wrapped-around structure | Jean-Pierre Colinge, Ta-Pen Guo, Carlos H. Diaz | 2016-10-25 |
| 9461110 | FETs and methods of forming FETs | Chih-Hao Wang, Ching-Wei Tsai, Chi-Wen Liu, Jhon Jhy Liaw, Wai-Yi Lien | 2016-10-04 |
| 9455334 | Method of forming a Fin structure of semiconductor device | Jiun-Jia Huang, Chao-Hsiung Wang, Chi-Wen Liu | 2016-09-27 |
| 9449975 | FinFET devices and methods of forming | Chi-Wen Liu | 2016-09-20 |
| 9443856 | Semiconductor device and fabricating the same | Ting-Hung Hsu | 2016-09-13 |
| 9443962 | Recessing STI to increase fin height in fin-first process | Guan-Lin Chen | 2016-09-13 |
| 9437683 | Method and structure for FinFET device | Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu | 2016-09-06 |
| 9419098 | Tuning strain in semiconductor devices | Jean-Pierre Colinge, Gwan Sin Chang, Zhiqiang Wu, Chih-Hao Wang, Carlos H. Diaz | 2016-08-16 |
| 9418897 | Wrap around silicide for FinFETs | Chi-Wen Liu, Ying-Keung Leung | 2016-08-16 |
| 9412828 | Aligned gate-all-around structure | Jean-Pierre Colinge, Zhiqiang Wu | 2016-08-09 |
| 9406778 | Semiconductor device and formation thereof | Guan-Lin Chen | 2016-08-02 |
| 9397159 | Silicide region of gate-all-around transistor | Chi-Wen Liu, Chao-Hsiung Wang | 2016-07-19 |
| 9355915 | Integrate circuit with nanowires | Jiun-Jia Huang | 2016-05-31 |
| 9349866 | Structure and method for FinFET device | — | 2016-05-24 |
| 9349837 | Recessing STI to increase Fin height in Fin-first process | Guan-Lin Chen | 2016-05-24 |
| 9349850 | Thermally tuning strain in semiconductor devices | Jean-Pierre Colinge, Gwan Sin Chang, Zhiqiang Wu, Chih-Hao Wang, Carlos H. Diaz | 2016-05-24 |
| 9343551 | Methods for manufacturing a fin structure of semiconductor device | Chih-Hao Wang, Zhiqiang Wu, Carlos H. Diaz, Jean-Pierre Colinge | 2016-05-17 |
| 9318606 | FinFET device and method of fabricating same | Chih-Hao Wang, Gwan Sin Chang, Zhiqiang Wu | 2016-04-19 |
| 9306067 | Nonplanar device and strain-generating channel dielectric | Ka-Hing Fung, Zhiqiang Wu | 2016-04-05 |
| 9306069 | Isolation structure of fin field effect transistor | Guan-Lin Chen, Chao-Hsiung Wang, Chi-Wen Liu | 2016-04-05 |