Issued Patents All Time
Showing 51–75 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9166143 | Magnetic random access memory with multiple free layers | Huadong Gan, Yuchen Zhou, Yiming Huai | 2015-10-20 |
| 9149783 | Device for producing ethoxylation derivatives | I-Min Tsai, Kun-Yi Li, Yanzhen Huang, Kechang Li, Weiming Wu | 2015-10-06 |
| 9128821 | Data updating in non-volatile memory | Yiran Chen, Hai Li, Wenzhong Zhu, Yuan-Yong Yan, Harry Hongyue Liu | 2015-09-08 |
| 9105494 | Termination trench for power MOSFET applications | Yeeheng Lee, Madhur Bodbe, Daniel Calafut, Hamza Yilmaz, Ji Pan +2 more | 2015-08-11 |
| 9093521 | Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout | Anup Bhalla, Moses Ho | 2015-07-28 |
| 9087593 | Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit | Wenzhong Zhu, Henry Huang, Yiran Chen, Haiwen Xi | 2015-07-21 |
| 9082951 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen +1 more | 2015-07-14 |
| 9070855 | Magnetic random access memory having perpendicular enhancement layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen | 2015-06-30 |
| 9030864 | Magnetic tunnel junction with electronically reflective insulative spacer | Yuankai Zheng, Dimitar V. Dimitrov, Wei Tian, Dexin Wang, Zheng Gao | 2015-05-12 |
| 9029236 | Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method | Anup Bhalla, Hamza Yilmaz, Daniel Ng | 2015-05-12 |
| 8962164 | Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling | Shaoping Li, Kaizhong Gao, Lei Wang, Wenzhong Zhu | 2015-02-24 |
| 8952205 | Method for producing methoxypolyethylene glycols | I-Min Tsai, Kun-Yi Li, Yanzhen Huang, Kechang Li, Weiming Wu | 2015-02-10 |
| 8929016 | Heater assembly and method of heating | Kaizhong Gao, Raul Horacio Andruet | 2015-01-06 |
| 8928031 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2015-01-06 |
| 8928079 | MOS device with low injection diode | Anup Bhalla, Ji Pan, Sung-Po Wei | 2015-01-06 |
| 8907416 | Dual gate oxide trench MOSFET with channel stop trench | Sung-Shan Tai, Sik Lui | 2014-12-09 |
| 8809143 | Fabrication of MOS device with schottky barrier controlling layer | Anup Bhalla, Ji Pan, Sung-Po Wei | 2014-08-19 |
| 8802530 | MOSFET with improved performance through induced net charge region in thick bottom insulator | Anup Bhalla, Daniel Ng | 2014-08-12 |
| 8792264 | Method of switching out-of-plane magnetic tunnel junction cells | Insik Jin, Yong Lu, Haiwen Xi | 2014-07-29 |
| 8780619 | Magnetic memory element with multi-domain storage layer | Haiwen Xi, Yuankai Zheng, Dimitar V. Dimitrov, Pat J. Ryan | 2014-07-15 |
| 8742518 | Magnetic tunnel junction with free layer having exchange coupled magnetic elements | Kaizhong Gao | 2014-06-03 |
| 8729601 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2014-05-20 |
| 8728890 | Fabrication of MOS device with integrated Schottky diode in active region contact trench | Anup Bhalla, Ji Pan, Sung-Po Wei | 2014-05-20 |
| 8697520 | Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS | Yeeheng Lee, Yongping Ding | 2014-04-15 |
| 8692322 | Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application | Ji Pan, Daniel Ng, Anup Bhalla | 2014-04-08 |