Issued Patents All Time
Showing 101–125 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8299494 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2012-10-30 |
| 8289759 | Non-volatile memory cell with precessional switching | Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu +3 more | 2012-10-16 |
| 8289756 | Non volatile memory including stabilizing structures | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Wei Tian +1 more | 2012-10-16 |
| 8289758 | Magnetic tunnel junction with electronically reflective insulative spacer | Yuankai Zheng, Dimitar V. Dimitrov, Wei Tian, Dexin Wang, Zheng Gao | 2012-10-16 |
| 8283723 | MOS device with low injection diode | Anup Bhalla, Ji Pan, Sung-Po Wei | 2012-10-09 |
| 8270204 | Domain wall movement on magnetic strip tracks | Haiwen Xi, Yiran Chen, Yuan-Yong Yan, Jun Zheng | 2012-09-18 |
| 8253192 | MOS device with varying trench depth | Anup Bhalla | 2012-08-28 |
| 8247297 | Method of filling large deep trench with high quality oxide for semiconductor devices | Anup Bhalla, Yeeheng Lee | 2012-08-21 |
| 8247329 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2012-08-21 |
| 8223532 | Magnetic field assisted STRAM cells | Haiwen Xi, Hongyue Liu, Insik Jin, Andreas Roelofs, Eileen Yan +1 more | 2012-07-17 |
| 8213215 | Resistive sense memory calibration for self-reference read method | Yiran Chen, Hai Li, Wenzhong Zhu, Henry Huang, Hongyue Liu | 2012-07-03 |
| 8213222 | Magnetic tunnel junction with compensation element | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Wei Tian, Xiaohua Lou | 2012-07-03 |
| 8203862 | Voltage reference generation with selectable dummy regions | Yiran Chen, Hai Li, Wenzhong Zhu, Yuan-Yong Yan, Harry Hongyue Liu | 2012-06-19 |
| 8203899 | Memory cell with proportional current self-reference sensing | Yiran Chen, Hai Li, Wenzhong Zhu, Ran Wang, Harry Hongyue Liu | 2012-06-19 |
| 8199562 | Memory cell with enhanced read and write sense margins | Wenzhong Zhu, Hai Li, Yiran Chen, Henry Huang, Haiwen Xi | 2012-06-12 |
| 8198660 | Multi-bit STRAM memory cells | Dimitar V. Dimitrov, Zheng Gao | 2012-06-12 |
| 8199569 | Diode assisted switching spin-transfer torque memory unit | Xuguang Wang, Yiran Chen, Dimitar V. Dimitrov, Hongyue Liu | 2012-06-12 |
| 8194444 | Spin-transfer torque memory self-reference read method | Yuankai Zheng, Yiran Chen, Zheng Gao, Dimitar V. Dimitrov, Wenzhong Zhu +1 more | 2012-06-05 |
| 8154914 | Predictive thermal preconditioning and timing control for non-volatile memory cells | Yiran Chen, Hai Li, Harry Hongyue Liu, Dimitar V. Dimitrov, Alan Xuguang Wang | 2012-04-10 |
| 8139397 | Spatial correlation of reference cells in resistive memory array | Yiran Chen, Hai Li, Wenzhong Zhu, Henry Huang, Hongyue Liu | 2012-03-20 |
| 8107282 | Asymmetric write current compensation | Wenzhong Zhu, Yong Lu, Yiran Chen, Alan Xuguang Wang, Xiaohua Lou +1 more | 2012-01-31 |
| 8105895 | Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout | Anup Bhalla, Moses Ho | 2012-01-31 |
| 8102691 | Magnetic tracks with domain wall storage anchors | Haiwen Xi, Dimitar V. Dimitrov, Paul E. Anderson, Harry Hongyue Liu, Song S. Xue +2 more | 2012-01-24 |
| 8093651 | MOS device with integrated schottky diode in active region contact trench | Anup Bhalla, Ji Pan, Sung-Po Wei | 2012-01-10 |
| 8059453 | Magnetic tunnel junction and memristor apparatus | Yiran Chen, Alan Xuguang Wang, Haiwen Xi, Wenzhong Zhu, Hai Li +1 more | 2011-11-15 |