Issued Patents All Time
Showing 25 most recent of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12382642 | Nonvolatile memory device including dual memory layers | Zhiqiang Wei, Zihui Wang, Ebrahim Abedifard | 2025-08-05 |
| 12284813 | Nonvolatile memory device including dual memory layers | Zhiqiang Wei, Zihui Wang, Ebrahim Abedifard | 2025-04-22 |
| 12278195 | Shielding of packaged magnetic random access memory | Zihui Wang | 2025-04-15 |
| 12133471 | Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers | Zihui Wang | 2024-10-29 |
| 12133395 | Multilayered seed for perpendicular magnetic structure including an oxide layer | Zihui Wang | 2024-10-29 |
| 11785784 | Multilayered seed for perpendicular magnetic structure including an oxide layer | Zihui Wang | 2023-10-10 |
| 11758822 | Magnetic memory element incorporating dual perpendicular enhancement layers | Zihui Wang | 2023-09-12 |
| 11678586 | Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same | Yuchen Zhou, Jing Zhang, Roger Klas Malmhall, Ioan Tudosa, Rajiv Yadav Ranjan | 2023-06-13 |
| 11417836 | Magnetic memory element incorporating dual perpendicular enhancement layers | Zihui Wang | 2022-08-16 |
| 11348971 | Multilayered seed for perpendicular magnetic structure | Zihui Wang | 2022-05-31 |
| 10950659 | Multilayered seed for perpendicular magnetic structure | Zihui Wang | 2021-03-16 |
| 10910555 | Magnetic memory element incorporating perpendicular enhancement layer | Zihui Wang, Xiaojie Hao, Longqian Hu | 2021-02-02 |
| 10727400 | Magnetic random access memory with perpendicular enhancement layer | Zihui Wang, Huadong Gan, Yuchen Zhou | 2020-07-28 |
| 10720469 | Multilayered seed structure for magnetic memory element including a CoFeB seed layer | Zihui Wang | 2020-07-21 |
| RE47975 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Zihui Wang, Xiaojie Hao | 2020-05-05 |
| 10490737 | Magnetic memory element including magnesium perpendicular enhancement layer | Zihui Wang | 2019-11-26 |
| 10438997 | Multilayered seed structure for magnetic memory element including a CoFeB seed layer | Zihui Wang | 2019-10-08 |
| 10361362 | Magnetic random access memory with ultrathin reference layer | Huadong Gan, Yuchen Zhou, Zihui Wang | 2019-07-23 |
| 10347691 | Magnetic memory element with multilayered seed structure | Bing K. Yen, Huadong Gan | 2019-07-09 |
| 10090456 | Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer | Huadong Gan, Zihui Wang | 2018-10-02 |
| 10079338 | Magnetic memory element with perpendicular enhancement layer | Huadong Gan, Bing K. Yen | 2018-09-18 |
| 10050083 | Magnetic structure with multilayered seed | Huadong Gan, Bing K. Yen | 2018-08-14 |
| 10032979 | Magnetic memory element with iridium anti-ferromagnetic coupling layer | Huadong Gan, Yuchen Zhou, Zihui Wang, Bing K. Yen, Xiaojie Hao +1 more | 2018-07-24 |
| 10008663 | Perpendicular magnetic fixed layer with high anisotropy | Xiaojie Hao, Zihui Wang, Huadong Gan, Yuchen Zhou | 2018-06-26 |
| 9871191 | Magnetic random access memory with ultrathin reference layer | Yuchen Zhou, Zihui Wang, Xiaojie Hao, Huadong Gan, Xiaobin Wang | 2018-01-16 |