Issued Patents All Time
Showing 25 most recent of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10727400 | Magnetic random access memory with perpendicular enhancement layer | Zihui Wang, Yiming Huai, Yuchen Zhou | 2020-07-28 |
| 10361362 | Magnetic random access memory with ultrathin reference layer | Yiming Huai, Yuchen Zhou, Zihui Wang | 2019-07-23 |
| 10347691 | Magnetic memory element with multilayered seed structure | Yiming Huai, Bing K. Yen | 2019-07-09 |
| 10090456 | Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer | Yiming Huai, Zihui Wang | 2018-10-02 |
| 10079338 | Magnetic memory element with perpendicular enhancement layer | Yiming Huai, Bing K. Yen | 2018-09-18 |
| 10050083 | Magnetic structure with multilayered seed | Bing K. Yen, Yiming Huai | 2018-08-14 |
| 10032979 | Magnetic memory element with iridium anti-ferromagnetic coupling layer | Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen, Xiaojie Hao +1 more | 2018-07-24 |
| 10008663 | Perpendicular magnetic fixed layer with high anisotropy | Xiaojie Hao, Zihui Wang, Yuchen Zhou, Yiming Huai | 2018-06-26 |
| 10008540 | Spin-orbitronics device and applications thereof | Parviz Keshtbod, Xiaobin Wang, Kimihiro Satoh, Zihui Wang | 2018-06-26 |
| 9871190 | Magnetic random access memory with ultrathin reference layer | Yiming Huai, Yuchen Zhou, Xiaobin Wang, Zihui Wang | 2018-01-16 |
| 9871191 | Magnetic random access memory with ultrathin reference layer | Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaojie Hao, Xiaobin Wang | 2018-01-16 |
| 9831421 | Magnetic memory element with composite fixed layer | Zihui Wang, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more | 2017-11-28 |
| 9793319 | Multilayered seed structure for perpendicular MTJ memory element | Yiming Huai, Bing K. Yen, Roger Klas Malmhall, Yuchen Zhou | 2017-10-17 |
| 9780300 | Magnetic memory element with composite perpendicular enhancement layer | Yuchen Zhou, Bing K. Yen, Yiming Huai | 2017-10-03 |
| 9748471 | Perpendicular magnetic memory element having magnesium oxide cap layer | Yuchen Zhou, Zihui Wang, Yiming Huai | 2017-08-29 |
| 9647202 | Magnetic random access memory with perpendicular enhancement layer | Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaobin Wang | 2017-05-09 |
| 9647032 | Spin-orbitronics device and applications thereof | Xiaobin Wang, Parviz Keshtbod, Kimihiro Satoh, Zihui Wang | 2017-05-09 |
| 9634244 | Magnetic random access memory with perpendicular interfacial anisotropy | Yiming Huai, Zihui Wang, Yuchen Zhou | 2017-04-25 |
| 9608038 | Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer | Zihui Wang, Yuchen Zhou, Yiming Huai | 2017-03-28 |
| 9559144 | Magnetic random access memory element having tantalum perpendicular enhancement layer | Yiming Huai, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen | 2017-01-31 |
| 9548334 | Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer | Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaobin Wang | 2017-01-17 |
| 9543506 | Magnetic random access memory with tri-layer reference layer | Yiming Huai, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen +1 more | 2017-01-10 |
| 9496489 | Magnetic random access memory with multilayered seed structure | Yiming Huai, Yuchen Zhou | 2016-11-15 |
| 9443577 | Voltage-switched magnetic random access memory (MRAM) and method for using the same | Zihui Wang, Xiaobin Wang, Yuchen Zhou, Yiming Huai | 2016-09-13 |
| 9444038 | Magnetic random access memory with nickel/transition metal multilayered seed structure | Yiming Huai, Bing K. Yen, Roger Klas Malmhall, Yuchen Zhou | 2016-09-13 |