Issued Patents All Time
Showing 25 most recent of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432931 | Memory cell including two selectors and method of making same | Zhiqiang Wei | 2025-09-30 |
| 12382642 | Nonvolatile memory device including dual memory layers | Zhiqiang Wei, Ebrahim Abedifard, Yiming Huai | 2025-08-05 |
| 12284813 | Nonvolatile memory device including dual memory layers | Zhiqiang Wei, Ebrahim Abedifard, Yiming Huai | 2025-04-22 |
| 12278195 | Shielding of packaged magnetic random access memory | Yiming Huai | 2025-04-15 |
| 12133471 | Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers | Yiming Huai | 2024-10-29 |
| 12133395 | Multilayered seed for perpendicular magnetic structure including an oxide layer | Yiming Huai | 2024-10-29 |
| 12126286 | Fault tolerance decision-making method and system for sensor failure of vehicular wheel hub driving system | Weigong Zhao, Zhiyuan He, Jiongjiong Cai, Zhentao Qian | 2024-10-22 |
| 11848039 | Cross-point MRAM including self-compliance selector | Zhiqiang Wei, Kimihiro Satoh, Woojin Kim | 2023-12-19 |
| 11785784 | Multilayered seed for perpendicular magnetic structure including an oxide layer | Yiming Huai | 2023-10-10 |
| 11758822 | Magnetic memory element incorporating dual perpendicular enhancement layers | Yiming Huai | 2023-09-12 |
| 11417836 | Magnetic memory element incorporating dual perpendicular enhancement layers | Yiming Huai | 2022-08-16 |
| 11348971 | Multilayered seed for perpendicular magnetic structure | Yiming Huai | 2022-05-31 |
| 10950659 | Multilayered seed for perpendicular magnetic structure | Yiming Huai | 2021-03-16 |
| 10910555 | Magnetic memory element incorporating perpendicular enhancement layer | Xiaojie Hao, Longqian Hu, Yiming Huai | 2021-02-02 |
| 10727400 | Magnetic random access memory with perpendicular enhancement layer | Yiming Huai, Huadong Gan, Yuchen Zhou | 2020-07-28 |
| 10720469 | Multilayered seed structure for magnetic memory element including a CoFeB seed layer | Yiming Huai | 2020-07-21 |
| RE47975 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | Jing Zhang, Yiming Huai, Rajiv Yadav Ranjan, Yuchen Zhou, Xiaojie Hao | 2020-05-05 |
| 10490737 | Magnetic memory element including magnesium perpendicular enhancement layer | Yiming Huai | 2019-11-26 |
| 10438997 | Multilayered seed structure for magnetic memory element including a CoFeB seed layer | Yiming Huai | 2019-10-08 |
| 10361362 | Magnetic random access memory with ultrathin reference layer | Huadong Gan, Yiming Huai, Yuchen Zhou | 2019-07-23 |
| 10153017 | Method for sensing memory element coupled to selector device | Hongxin Yang, Xiaobin Wang, Jing Zhang, Xiaojie Hao, Kimihiro Satoh | 2018-12-11 |
| 10090456 | Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer | Yiming Huai, Huadong Gan | 2018-10-02 |
| 10032979 | Magnetic memory element with iridium anti-ferromagnetic coupling layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Bing K. Yen, Xiaojie Hao +1 more | 2018-07-24 |
| 10008663 | Perpendicular magnetic fixed layer with high anisotropy | Xiaojie Hao, Huadong Gan, Yuchen Zhou, Yiming Huai | 2018-06-26 |
| 10008540 | Spin-orbitronics device and applications thereof | Parviz Keshtbod, Xiaobin Wang, Kimihiro Satoh, Huadong Gan | 2018-06-26 |