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Cross-point MRAM including self-compliance selector |
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Multilayered seed for perpendicular magnetic structure including an oxide layer |
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Magnetic memory element incorporating dual perpendicular enhancement layers |
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Magnetic memory element incorporating dual perpendicular enhancement layers |
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Multilayered seed for perpendicular magnetic structure |
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Multilayered seed for perpendicular magnetic structure |
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Magnetic random access memory with perpendicular enhancement layer |
Yiming Huai, Huadong Gan, Yuchen Zhou |
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Multilayered seed structure for magnetic memory element including a CoFeB seed layer |
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2020-07-21 |
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Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer |
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Magnetic memory element including magnesium perpendicular enhancement layer |
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2019-11-26 |
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Multilayered seed structure for magnetic memory element including a CoFeB seed layer |
Yiming Huai |
2019-10-08 |
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Magnetic random access memory with ultrathin reference layer |
Huadong Gan, Yiming Huai, Yuchen Zhou |
2019-07-23 |
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Method for sensing memory element coupled to selector device |
Hongxin Yang, Xiaobin Wang, Jing Zhang, Xiaojie Hao, Kimihiro Satoh |
2018-12-11 |
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Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer |
Yiming Huai, Huadong Gan |
2018-10-02 |
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Magnetic memory element with iridium anti-ferromagnetic coupling layer |
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Perpendicular magnetic fixed layer with high anisotropy |
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2018-06-26 |
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Spin-orbitronics device and applications thereof |
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2018-06-26 |