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Ebrahim Abedifard — 128 Patents

ATAvalanche Technology: 65 patents #5 of 44Top 15%

Micron: 63 patents #270 of 6,374Top 5%

San Jose, CA: #153 of 32,062 inventorsTop 1%

California: #1,392 of 386,348 inventorsTop 1%

Overall (All Time): #8,696 of 4,157,543Top 1%

128 Patents All Time

Ebrahim Abedifard has been granted 128 US patents while listed as an inventor at Avalanche Technology. The first was granted in 2001 and the most recent in August 2025. Ebrahim Abedifard ranks #8,696 of 4,157,543 US inventors in our database (top 0.21%). Patent records list Ebrahim Abedifard in San Jose, CA, US.

Patents per Year

Issued Patents All Time

Showing 1–25 of 128 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12382642	Nonvolatile memory device including dual memory layers	Zhiqiang Wei, Zihui Wang, Yiming Huai	2025-08-05
12284813	Nonvolatile memory device including dual memory layers	Zhiqiang Wei, Zihui Wang, Yiming Huai	2025-04-22
11854591	Magnetic memory read circuit and calibration method therefor	Thinh Tran	2023-12-26
11289142	Nonvolatile memory sensing circuit including variable current source	Thinh Tran	2022-03-29
11211107	Magnetic memory read circuit and calibration method therefor	Thinh Tran	2021-12-28
10832751	Magnetic memory and method for using the same	Dean Nobunaga	2020-11-10
10811072	Power-efficient programming of magnetic memory	Parviz Keshtbod	2020-10-20
10515681	Power-efficient programming of magnetic memory	Parviz Keshtbod	2019-12-24
10395710	Magnetic memory emulating dynamic random access memory (DRAM)	Parviz Keshtbod, Ravishankar Tadepalli	2019-08-27
9911482	Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations	Parviz Keshtbod	2018-03-06
9858977	Programming of magnetic random access memory (MRAM) by boosting gate voltage	Parviz Keshtbod	2018-01-02
9793003	Programming of non-volatile memory subjected to high temperature exposure	Uday Chandrasekhar, Rajiv Yadav Ranjan, Yiming Huai	2017-10-17
9786344	Programming of magnetic random access memory (MRAM) by boosting gate voltage	Parviz Keshtbod	2017-10-10
9728240	Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)	Parviz Keshtbod	2017-08-08
9691464	Fast programming of magnetic random access memory (MRAM)	Parviz Keshtbod	2017-06-27
9646668	Spin-transfer torque magnetic random access memory (STTMRAM) with enhanced write current	Yuchen Zhou, Mahmood Mozaffari	2017-05-09
9607676	Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations	Parviz Keshtbod	2017-03-28
9558802	Fast programming of magnetic random access memory (MRAM)	Parviz Keshtbod	2017-01-31
9530479	Method and apparatus for increasing the reliability of an access transistor coupled to a magnetic tunnel junction (MTJ)	—	2016-12-27
9520174	Method and apparatus for writing to a magnetic tunnel junction (MTJ) by applying incrementally increasing voltage level	Petro Estakhri	2016-12-13
9502092	Unipolar-switching perpendicular MRAM and method for using same	Yuchen Zhou, Zihui Wang, Yiming Huai, Xiaojie Hao	2016-11-22
9472595	Perpendicular MRAM with magnet	Yuchen Zhou, Bing K. Yen, Yiming Huai	2016-10-18
9401194	Fast programming of magnetic random access memory (MRAM)	Parviz Keshtbod	2016-07-26
9349427	Method for screening arrays of magnetic memories	Yuchen Zhou, Yiming Huai	2016-05-24
9343134	Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (MTJ)	—	2016-05-17