Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for increasing the reliability of an access transistor coupled to a magnetic tunnel junction (MTJ)

Method and apparatus for increasing the reliability of an access transistor coupled to a magnetic tunnel junction (MTJ)

US Patent 9530479 · Granted Dec 27, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nonvolatile memory device including dual memory layers2025
Nonvolatile memory device including dual memory layers2025
Magnetic memory read circuit and calibration method therefor2023
Nonvolatile memory sensing circuit including variable current source2022
Magnetic memory read circuit and calibration method therefor2021
Magnetic memory and method for using the same2020
Power-efficient programming of magnetic memory2020
Power-efficient programming of magnetic memory2019
Magnetic memory emulating dynamic random access memory (DRAM)2019
Method and apparatus for adjustment of current through a magnetoresistive tunnel2018
Programming of magnetic random access memory (MRAM) by boosting gate voltage2018
Programming of non-volatile memory subjected to high temperature exposure2017