Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9871190 | Magnetic random access memory with ultrathin reference layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang | 2018-01-16 |
| 9871191 | Magnetic random access memory with ultrathin reference layer | Yuchen Zhou, Yiming Huai, Xiaojie Hao, Huadong Gan, Xiaobin Wang | 2018-01-16 |
| 9831421 | Magnetic memory element with composite fixed layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more | 2017-11-28 |
| 9748471 | Perpendicular magnetic memory element having magnesium oxide cap layer | Yuchen Zhou, Huadong Gan, Yiming Huai | 2017-08-29 |
| 9679625 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | Jing Zhang, Yiming Huai, Rajiv Yadav Ranjan, Yuchen Zhou, Xiaojie Hao | 2017-06-13 |
| 9647032 | Spin-orbitronics device and applications thereof | Xiaobin Wang, Parviz Keshtbod, Kimihiro Satoh, Huadong Gan | 2017-05-09 |
| 9647202 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Yuchen Zhou, Yiming Huai, Xiaobin Wang | 2017-05-09 |
| 9634244 | Magnetic random access memory with perpendicular interfacial anisotropy | Huadong Gan, Yiming Huai, Yuchen Zhou | 2017-04-25 |
| 9608038 | Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer | Yuchen Zhou, Huadong Gan, Yiming Huai | 2017-03-28 |
| 9559144 | Magnetic random access memory element having tantalum perpendicular enhancement layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen | 2017-01-31 |
| 9548334 | Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer | Huadong Gan, Yuchen Zhou, Yiming Huai, Xiaobin Wang | 2017-01-17 |
| 9543506 | Magnetic random access memory with tri-layer reference layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more | 2017-01-10 |
| 9502092 | Unipolar-switching perpendicular MRAM and method for using same | Yuchen Zhou, Ebrahim Abedifard, Yiming Huai, Xiaojie Hao | 2016-11-22 |
| 9443577 | Voltage-switched magnetic random access memory (MRAM) and method for using the same | Xiaobin Wang, Huadong Gan, Yuchen Zhou, Yiming Huai | 2016-09-13 |
| 9396781 | Magnetic random access memory having perpendicular composite reference layer | Yuchen Zhou, Huadong Gan, Yiming Huai | 2016-07-19 |
| 9337417 | Magnetic random access memory with perpendicular interfacial anisotropy | Huadong Gan, Yiming Huai, Yuchen Zhou | 2016-05-10 |
| 9306154 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Xiaobin Wang, Yiming Huai, Yuchen Zhou, Bing K. Yen +1 more | 2016-04-05 |
| 9252187 | Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips | Yuchen Zhou, Yiming Huai | 2016-02-02 |
| 9231027 | Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer | Huadong Gan, Yiming Huai, Xiaobin Wang, Yuchen Zhou | 2016-01-05 |
| 9166146 | Electric field assisted MRAM and method for using the same | Yuchen Zhou, Yiming Huai | 2015-10-20 |
| 9082951 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more | 2015-07-14 |
| 9070692 | Shields for magnetic memory chip packages | Yuchen Zhou, Bernardo Sardinha, Rajiv Yadav Ranjan, Ebrahim Abedifard, Roger Klas Malmhall +2 more | 2015-06-30 |
| 9070855 | Magnetic random access memory having perpendicular enhancement layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen | 2015-06-30 |
| 8891291 | Magnetoresistive logic cell and method of use | Yuchen Zhou, Yiming Huai | 2014-11-18 |
| 8891292 | Magnetoresistive layer structure with voltage-induced switching and logic cell application | Yuchen Zhou, Yiming Huai | 2014-11-18 |