Issued Patents All Time
Showing 26–50 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9871190 | Magnetic random access memory with ultrathin reference layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang | 2018-01-16 |
| 9871191 | Magnetic random access memory with ultrathin reference layer | Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaojie Hao, Huadong Gan | 2018-01-16 |
| 9831421 | Magnetic memory element with composite fixed layer | Zihui Wang, Huadong Gan, Yiming Huai, Yuchen Zhou, Bing K. Yen +1 more | 2017-11-28 |
| 9704948 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Yongping Ding, Hamza Yilmaz, Madhur Bobde | 2017-07-11 |
| 9704955 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2017-07-11 |
| 9647032 | Spin-orbitronics device and applications thereof | Parviz Keshtbod, Kimihiro Satoh, Zihui Wang, Huadong Gan | 2017-05-09 |
| 9647202 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Yuchen Zhou, Yiming Huai, Zihui Wang | 2017-05-09 |
| 9627526 | Assymetric poly gate for optimum termination design in trench power MOSFETs | Yeeheng Lee, Yongping Ding | 2017-04-18 |
| 9586570 | Methods and system for verifying a brake system in a vehicle | Kimberly Richey | 2017-03-07 |
| 9570404 | Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application | Ji Hwan Pang, Daniel Ng, Anup Bhalla | 2017-02-14 |
| 9559144 | Magnetic random access memory element having tantalum perpendicular enhancement layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen | 2017-01-31 |
| 9548074 | Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling | Shaoping Li, Kaizhong Gao, Lei Wang, Wenzhong Zhu | 2017-01-17 |
| 9548334 | Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer | Huadong Gan, Yuchen Zhou, Yiming Huai, Zihui Wang | 2017-01-17 |
| 9543506 | Magnetic random access memory with tri-layer reference layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen +1 more | 2017-01-10 |
| 9502503 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2016-11-22 |
| 9450843 | Method for indicating port states and switch | Guolang Li, Xiang Zhou, Xizhi Jia | 2016-09-20 |
| 9443577 | Voltage-switched magnetic random access memory (MRAM) and method for using the same | Zihui Wang, Huadong Gan, Yuchen Zhou, Yiming Huai | 2016-09-13 |
| 9431495 | Method of forming SGT MOSFETs with improved termination breakdown voltage | Yongping Ding, Yeeheng Lee, Madhur Bobde | 2016-08-30 |
| 9356022 | Semiconductor device with termination structure for power MOSFET applications | Yeeheng Lee, Madhur Bobde, Daniel Calafut, Hamza Yilmaz, Ji Pan +2 more | 2016-05-31 |
| 9349796 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2016-05-24 |
| 9306154 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Zihui Wang, Yiming Huai, Yuchen Zhou, Bing K. Yen +1 more | 2016-04-05 |
| 9245949 | Nanotube semiconductor devices | Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang | 2016-01-26 |
| 9236450 | Fabrication of MOS device with schottky barrier controlling layer | Anup Bhalla, Ji Pan, Sung-Po Wei | 2016-01-12 |
| 9231027 | Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer | Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang | 2016-01-05 |
| 9214545 | Dual gate oxide trench MOSFET with channel stop trench | Sung-Shan Tai, Sik Lui | 2015-12-15 |