Issued Patents All Time
Showing 26–50 of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9396989 | Air gaps between copper lines | Nitin K. Ingle | 2016-07-19 |
| 9378978 | Integrated oxide recess and floating gate fin trimming | Randhir P. S. Thakur, Shankar Venkataraman, Nitin K. Ingle | 2016-06-28 |
| 9379120 | Metal control gate structures and air gap isolation in non-volatile memory | Tuan Pham, Hiroyuki Kinoshita, Yuan Zhang, Henry Chin, James Kai +3 more | 2016-06-28 |
| 9349740 | Non-volatile storage element with suspended charge storage region | Donovan Lee, James Kai | 2016-05-24 |
| 9331181 | Nanodot enhanced hybrid floating gate for non-volatile memory devices | Donovan Lee, James Kai, George Samachisa, Henry Chien, George Matamis | 2016-05-03 |
| 9263278 | Dopant etch selectivity control | Anchuan Wang, Nitin K. Ingle | 2016-02-16 |
| 9252151 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Henry Chien, Donovan Lee, Yuan Zhang, James Kai, George Matamis | 2016-02-02 |
| 9230971 | NAND string containing self-aligned control gate sidewall cladding | Donovan Lee, James Kai, George Matamis | 2016-01-05 |
| 9224746 | Inverted-T word line and formation for non-volatile storage | James Kai, Donovan Lee, Yuan Zhang, Akira Matsudaira | 2015-12-29 |
| 9177808 | Memory device with control gate oxygen diffusion control and method of making thereof | James Kai, Donovan Lee, Akira Matsudaira, Yuan Zhang | 2015-11-03 |
| 9165940 | Three dimensional NAND device with silicide containing floating gates and method of making thereof | Henry Chien, Johann Alsmeier, George Samachisa, Henry Chin, George Matamis +3 more | 2015-10-20 |
| 9165786 | Integrated oxide and nitride recess for better channel contact in 3D architectures | Randhir P. S. Thakur, Nitin K. Ingle | 2015-10-20 |
| 9159606 | Metal air gap | Randhir P. S. Thakur, Nitin K. Ingle | 2015-10-13 |
| 9136273 | Flash gate air gap | Nitin K. Ingle | 2015-09-15 |
| 9123714 | Metal layer air gap formation | Jayavel Pachamuthu, Hiroyuki Kinoshita, George Matamis | 2015-09-01 |
| 9123890 | Resistance-switching memory cell with multiple raised structures in a bottom electrode | George Matamis, James Kai, Yuan Zhang, Henry Chien | 2015-09-01 |
| 9029936 | Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof | George Samachisa, George Matamis, James Kai, Yuan Zhang | 2015-05-12 |
| 9030016 | Semiconductor device with copper interconnects separated by air gaps | James Kai, Jayavel Pachamuthu, Jarrett Jun Liang, George Matamis | 2015-05-12 |
| 8987087 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Henry Chien, Donovan Lee, Yuan Zhang, James Kai, George Matamis | 2015-03-24 |
| 8987802 | Method for using nanoparticles to make uniform discrete floating gate layer | Donovan Lee, James Kai, George Matamis, Steven J. Radigan | 2015-03-24 |
| 8969153 | NAND string containing self-aligned control gate sidewall cladding | Donovan Lee, James Kai, George Matamis | 2015-03-03 |
| 8946022 | Integrated nanostructure-based non-volatile memory fabrication | James Kai, Masaaki Higashitani, Takashi Orimoto, George Matamis, Henry Chien | 2015-02-03 |
| 8946048 | Method of fabricating non-volatile memory with flat cell structures and air gap isolation | George Matamis, Henry Chien, James Kai, Yuan Zhang | 2015-02-03 |
| 8946803 | Method of forming a floating gate with a wide base and a narrow stem | George Matamis, Henry Chien, Takashi Orimoto, James Kai | 2015-02-03 |
| 8928061 | Three dimensional NAND device with silicide containing floating gates | Henry Chien, Johann Alsmeier, George Samachisa, Henry Chin, George Matamis +3 more | 2015-01-06 |