Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
DD

Deepanshu Dutta

STSandisk Technologies: 180 patents #5 of 2,224Top 1%
WTWestern Digital Technologies: 7 patents #474 of 3,180Top 15%
Fremont, CA: #17 of 9,298 inventorsTop 1%
California: #639 of 386,348 inventorsTop 1%
Overall (All Time): #3,871 of 4,157,543Top 1%
187 Patents All Time

Issued Patents All Time

Showing 26–50 of 187 patents

Patent #TitleCo-InventorsDate
11699494 Peak and average ICC reduction by tier-based sensing during program verify operations of non-volatile memory structures Xue Bai Pitner, Yu-Chung Lien, Huai-Yuan Tseng, Ravi Kumar 2023-07-11
11587619 Block configuration for memory device with separate sub-blocks Yu-Chung Lien, Jiahui Yuan 2023-02-21
11568943 Memory apparatus and method of operation using zero pulse smart verify Xue Bai Pitner, Dengtao Zhao, Ravi Kumar 2023-01-31
11557358 Memory apparatus and method of operation using adaptive erase time compensation for segmented erase Dengtao Zhao, Ravi Kumar 2023-01-17
11551761 Non-volatile memory with program skip for edge word line Xiang Yang 2023-01-10
11532370 Non-volatile memory with fast multi-level program verify Xiang Yang, Huai-Yuan Tseng 2022-12-20
11514991 Program tail plane comparator for non-volatile memory structures Fanqi Wu, Hua-Ling Cynthia Hsu, Huai-Yuan Tseng 2022-11-29
11508450 Dual time domain control for dynamic staggering Yu-Chung Lien, Huai-Yuan Tseng 2022-11-22
11481154 Non-volatile memory with memory array between circuits James Kai, Johann Alsmeier, Jian Chen 2022-10-25
11475961 Nonvolatile memory with efficient look-ahead read Sujjatul Islam, Ravi Kumar 2022-10-18
11456333 Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof Yu-Chung Lien, Jiahui Yuan, Christopher J. Petti 2022-09-27
11437110 Erase tail comparator scheme Fanqi Wu, Huai-Yuan Tseng 2022-09-06
11423993 Bi-directional sensing in a memory Zhiping Zhang, Muhammad Masuduzzaman, Huai-Yuan Tseng, Peng Zhang, Dengtao Zhao 2022-08-23
11417400 Controlling timing and ramp rate of program-inhibit voltage signal during programming to optimize peak current Yu-Chung Lien, Huai-Yuan Tseng 2022-08-16
11409443 Intelligent memory wear leveling Ravi Kumar, Niles Yang, Mark Shlick 2022-08-09
11404127 Read refresh to improve power on data retention for a non-volatile memory Ravi Kumar, Vishwanath Basavaegowda Shanthakumar 2022-08-02
11398280 Lockout mode for reverse order read operation Yu-Chung Lien, Huai-Yuan Tseng, Ravi Kumar 2022-07-26
11385810 Dynamic staggering for programming in nonvolatile memory Yu-Chung Lien, Huai-Yuan Tseng 2022-07-12
11361834 Systems and methods for dual-pulse programming Ravi Kumar 2022-06-14
11342035 Memory apparatus and method of operation using one pulse smart verify Xue Bai Pitner, Ravi Kumar 2022-05-24
11342033 Look neighbor ahead for data recovery Yi Song, Huai-Yuan Tseng 2022-05-24
11335413 Ramp rate control for peak and average current reduction of open blocks Yu-Chung Lien, Huai-Yuan Tseng 2022-05-17
11322213 Enhanced multistate verify techniques in a memory device Muhammad Masuduzzaman 2022-05-03
11302409 Programming techniques including an all string verify mode for single-level cells of a memory device Xue Bai Pitner, Huai-Yuan Tseng, Ravi Kumar, Cynthia Hsu 2022-04-12
11270776 Countermeasure for reducing peak current during program operation under first read condition Yu-Chung Lien, Huai-Yuan Tseng 2022-03-08