Issued Patents All Time
Showing 76–100 of 135 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8264890 | Two pass erase for non-volatile storage | Nima Mokhlesi, Anubhav Khandelwal | 2012-09-11 |
| 8184479 | Reducing the impact of interference during programming | Emilio Yero | 2012-05-22 |
| 8164135 | Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture | Changyuan Chen, Ya-Fen Lin | 2012-04-24 |
| 8111552 | Offset non-volatile storage | Jeffrey W. Lutze | 2012-02-07 |
| 8094492 | Reducing the impact of interference during programming | Emilio Yero | 2012-01-10 |
| 7961511 | Hybrid programming methods and systems for non-volatile memory storage elements | Yingda Dong, Changyuan Chen, Jeffrey W. Lutze | 2011-06-14 |
| 7944749 | Method of low voltage programming of non-volatile memory cells | Jeffrey W. Lutze | 2011-05-17 |
| 7919809 | Dielectric layer above floating gate for reducing leakage current | Henry Chin, James Kai, Takashi Orimoto, Vinod R. Purayath, George Matamis | 2011-04-05 |
| 7915124 | Method of forming dielectric layer above floating gate for reducing leakage current | James Kai, Takashi Orimoto, Vinod R. Purayath, George Matamis, Henry Chin | 2011-03-29 |
| 7907449 | Two pass erase for non-volatile storage | Nima Mokhlesi, Anubhav Khandelwal | 2011-03-15 |
| 7894263 | High voltage generation and control in source-side injection programming of non-volatile memory | Hock C. So | 2011-02-22 |
| 7869273 | Reducing the impact of interference during programming | Emilio Yero | 2011-01-11 |
| 7808839 | Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing | Yuniarto Widjaja, John W. Cooksey, Changyuan Chen, Feng Gao, Ya-Fen Lin | 2010-10-05 |
| 7800956 | Programming algorithm to reduce disturb with minimal extra time penalty | Deepanshu Dutta, Yingda Dong | 2010-09-21 |
| 7764547 | Regulation of source potential to combat cell source IR drop | Nima Mokhlesi, Deepak C. Sekar | 2010-07-27 |
| 7760547 | Offset non-volatile storage | Jeffrey W. Lutze | 2010-07-20 |
| 7749779 | Landing pad for use as a contact to a conductive spacer | Wen-Juei Lu, Felix Ying-Kit Tsui | 2010-07-06 |
| 7723774 | Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture | Changyuan Chen, Ya-Fen Lin | 2010-05-25 |
| 7706189 | Non-volatile storage system with transitional voltage during programming | Yingda Dong, Jeffrey W. Lutze | 2010-04-27 |
| 7656703 | Method for using transitional voltage during programming of non-volatile storage | Yingda Dong, Jeffrey W. Lutze | 2010-02-02 |
| 7623389 | System for low voltage programming of non-volatile memory cells | Jeffrey W. Lutze | 2009-11-24 |
| 7577034 | Reducing programming voltage differential nonlinearity in non-volatile storage | Jun Wan | 2009-08-18 |
| 7544569 | Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing | Feng Gao, Ya-Fen Lin, John W. Cooksey, Changyuan Chen, Yuniarto Widjaja | 2009-06-09 |
| 7468918 | Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data | Yingda Dong, Jeffrey W. Lutze, Gerrit Jan Hemink | 2008-12-23 |
| 7463531 | Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages | Gerrit Jan Hemink, Yingda Dong, Jeffrey W. Lutze | 2008-12-09 |