Issued Patents All Time
Showing 76–88 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8404143 | Highly dilutable polishing concentrates and slurries | Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar | 2013-03-26 |
| 8377730 | Method of manufacturing vertically aligned nanotubes, method of manufacturing sensor structure, and sensor element manufactured thereby | Seung Yun Yang, Gumhye Jeon, Jong Yeog SON, Chang-Soo Lee, Jin Kon Kim +1 more | 2013-02-19 |
| 8192644 | Highly dilutable polishing concentrates and slurries | Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar | 2012-06-05 |
| 7998842 | Atomic layer deposition metallic contacts, gates and diffusion barriers | Cyril Cabral, Jr., Stephen M. Rossnagel | 2011-08-16 |
| 7863083 | High temperature processing compatible metal gate electrode for pFETS and methods for fabrication | Ricky S. Amos, Douglas A. Buchanan, Cyril Cabral, Jr., Alessandro C. Callegari, Supratik Guha +4 more | 2011-01-04 |
| 7378338 | Method of forming an interconnect structure diffusion barrier with high nitrogen content | Cyril Cabral, Jr., Steffen K. Kaldor, Stephen M. Rossnagel | 2008-05-27 |
| 7282403 | Temperature stable metal nitride gate electrode | Dae-Gyu Park, Cyril Cabral, Jr., Oleg Gluschenkov | 2007-10-16 |
| 7211507 | PE-ALD of TaN diffusion barrier region on low-k materials | Derren N. Dunn, Stephen M. Rossnagel, Soon-Cheon Seo | 2007-05-01 |
| 7186446 | Plasma enhanced ALD of tantalum nitride and bilayer | Andrew J. Kellock, Stephen M. Rossnagel | 2007-03-06 |
| 7098537 | Interconnect structure diffusion barrier with high nitrogen content | Cyril Cabral, Jr., Steffen K. Kaldor, Stephen M. Rossnagel | 2006-08-29 |
| 7023064 | Temperature stable metal nitride gate electrode | Dae-Gyu Park, Cyril Cabral, Jr., Oleg Gluschenkov | 2006-04-04 |
| 6943097 | Atomic layer deposition of metallic contacts, gates and diffusion barriers | Cyril Cabral, Jr., Stephen M. Rossnagel | 2005-09-13 |
| 6770500 | Process of passivating a metal-gated complementary metal oxide semiconductor | Alessandro C. Callegari, Christopher P. D'Emic, Fenton R. McFeely, Vijay Narayanan, John J. Yurkas | 2004-08-03 |