Issued Patents All Time
Showing 26–50 of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9941154 | Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device | Stanley Seungchul Song, Zhongze Wang, John Jianhong Zhu | 2018-04-10 |
| 9922880 | Method and apparatus of multi threshold voltage CMOS | Jeffrey Junhao Xu | 2018-03-20 |
| 9876017 | Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang, Kern Rim | 2018-01-23 |
| 9871121 | Semiconductor device having a gap defined therein | Jeffrey Junhao Xu, Kern Rim, John Jianhong Zhu, Stanley Seungchul Song, Mustafa Badaroglu +2 more | 2018-01-16 |
| 9859210 | Integrated circuits having reduced dimensions between components | Stanley Seungchul Song, Da Yang | 2018-01-02 |
| 9824936 | Adjacent device isolation | Vladimir Machkaoutsan, Mustafa Badaroglu, Jeffrey Junhao Xu, Stanley Seungchul Song | 2017-11-21 |
| 9818817 | Metal-insulator-metal capacitor over conductive layer | John Jianhong Zhu, P R Chidambaram, Giridhar Nallapati | 2017-11-14 |
| 9812188 | Static random-access memory (SRAM) sensor for bias temperature instability | Niladri Narayan Mojumder, Zhongze Wang, Xiaonan Chen, Stanley Seungchul Song | 2017-11-07 |
| 9806083 | Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methods | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang, Kern Rim | 2017-10-31 |
| 9799560 | Self-aligned structure | Stanley Seungchul Song, Jeffrey Junhao Xu, Kern Rim, Da Yang, John Jianhong Zhu +4 more | 2017-10-24 |
| 9793164 | Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices | Vladimir Machkaoutsan, Stanley Seungchul Song, John Jianhong Zhu, Junjing Bao, Jeffrey Junhao Xu +2 more | 2017-10-17 |
| 9786356 | Memory device with adaptive voltage scaling based on error information | Zhongze Wang, Niladri Narayan Mojumder, Jonathan Liu | 2017-10-10 |
| 9721891 | Integrated circuit devices and methods | Jeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Niladri Narayan Mojumder | 2017-08-01 |
| 9691868 | Merging lithography processes for gate patterning | Stanley Seungchul Song, Zhongze Wang | 2017-06-27 |
| 9666481 | Reduced height M1 metal lines for local on-chip routing | Stanley Seungchul Song, Zhongze Wang, Niladri Narayan Mojumder, Mustafa Badaroglu | 2017-05-30 |
| 9660649 | Voltage scaling for holistic energy management | Niladri Narayan Mojumder, Stanley Seungchul Song, Kern Rim | 2017-05-23 |
| 9594864 | Method for asymmetrical geometrical scaling | Stanley Seungchul Song | 2017-03-14 |
| 9583178 | SRAM read preferred bit cell with write assist circuit | Seong-Ook Jung, Younghwi Yang, Bin Yang | 2017-02-28 |
| 9564518 | Method and apparatus for source-drain junction formation in a FinFET with in-situ doping | Vladimir Machkaoutsan, Jeffrey Junhao Xu, Stanley Seungchul Song, Mustafa Badaroglu | 2017-02-07 |
| 9564361 | Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device | Stanley Seungchul Song, Zhongze Wang, John Jianhong Zhu | 2017-02-07 |
| 9543248 | Integrated circuit devices and methods | Jeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Niladri Narayan Mojumder | 2017-01-10 |
| 9542518 | User experience based management technique for mobile system-on-chips | Niladri Narayan Mojumder, Stanley Seungchul Song, Kern Rim | 2017-01-10 |
| 9536596 | Three-port bit cell having increased width | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang | 2017-01-03 |
| 9524972 | Metal layers for a three-port bit cell | Niladri Narayan Mojumder, Ritu Chaba, Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang | 2016-12-20 |
| 9508589 | Conductive layer routing | Stanley Seungchul Song, Kern Rim, Zhongze Wang, Jeffrey Junhao Xu, Xiangdong Chen | 2016-11-29 |