Issued Patents All Time
Showing 51–75 of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9502414 | Adjacent device isolation | Vladimir Machkaoutsan, Mustafa Badaroglu, Jeffrey Junhao Xu, Stanley Seungchul Song | 2016-11-22 |
| 9502283 | Electron-beam (E-beam) based semiconductor device features | Stanley Seungchul Song, Jeffrey Junhao Xu, Da Yang | 2016-11-22 |
| 9496181 | Sub-fin device isolation | Stanley Seungchul Song, Jeffrey Junhao Xu, Vladimir Machkaoutsan, Mustafa Badaroglu | 2016-11-15 |
| 9478541 | Half node scaling for vertical structures | Stanley Seungchul Song, Kern Rim, Jeffrey Junhao Xu, Matthew Michael Nowak, Roawen Chen | 2016-10-25 |
| 9472453 | Systems and methods of forming a reduced capacitance device | Jeffrey Junhao Xu, John Jianhong Zhu, Stanley Seungchul Song, Kern Rim | 2016-10-18 |
| 9460777 | SRAM read buffer with reduced sensing delay and improved sensing margin | Seong-Ook Jung, Younghwi Yang, Stanley Seungchul Song, Zhongze Wang | 2016-10-04 |
| 9455026 | Shared global read and write word lines | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang, Ping-Lin Liu, Kern Rim | 2016-09-27 |
| 9424909 | Static random access memory (SRAM) arrays having substantially constant operational yields across multiple modes of operation | Niladri Narayan Mojumder, Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang | 2016-08-23 |
| 9412818 | System and method of manufacturing a fin field-effect transistor having multiple fin heights | Bin Yang, Xia Li, PR Chidambaram | 2016-08-09 |
| 9413349 | High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods | Xia Li, Xiao Lu, Xiaonan Chen, Zhongze Wang | 2016-08-09 |
| 9396931 | Method of forming fins from different materials on a substrate | Stanley Seungchul Song, Zhongze Wang | 2016-07-19 |
| 9379058 | Grounding dummy gate in scaled layout design | Stanley Seungchul Song, Zhongze Wang, Ohsang Kwon, Kern Rim, John Jianhong Zhu +3 more | 2016-06-28 |
| 9379014 | Static random-access memory (SRAM) array | Niladri Narayan Mojumder, Stanley Seungchul Song, Mosaddiq Saifuddin | 2016-06-28 |
| 9349686 | Reduced height M1 metal lines for local on-chip routing | Stanley Seungchul Song, Zhongze Wang, Niladri Narayan Mojumder, Mustafa Badaroglu | 2016-05-24 |
| 9343357 | Selective conductive barrier layer formation | Jeffrey Junhao Xu, John Jianhong Zhu | 2016-05-17 |
| 9336863 | Dual write wordline memory cell | Seong-Ook Jung, Younghwi Yang, Stanley Seungchul Song, Zhongze Wang | 2016-05-10 |
| 9336864 | Silicon germanium read port for a static random access memory register file | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang | 2016-05-10 |
| 9318564 | High density static random access memory array having advanced metal patterning | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang | 2016-04-19 |
| 9306066 | Method and apparatus of stressed FIN NMOS FinFET | Jeffrey Junhao Xu | 2016-04-05 |
| 9287347 | Metal-insulator-metal capacitor under redistribution layer | John Jianhong Zhu, P R Chidambaram, Giridhar Nallapati | 2016-03-15 |
| 9257556 | Silicon germanium FinFET formation by Ge condensation | Jeffrey Junhao Xu, Vladimir Machkaoutsan, Kern Rim, Stanley Seungchul Song | 2016-02-09 |
| 9257407 | Heterogeneous channel material integration into wafer | Stanley Seungchul Song, Zhongze Wang, Niladri Narayan Mojumder | 2016-02-09 |
| 9252228 | Threshold voltage adjustment in metal oxide semiconductor field effect transistor with silicon oxynitride polysilicon gate stack on fully depleted silicon-on-insulator | Stanley Seungchul Song | 2016-02-02 |
| 9252147 | Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chip | Ranadeep Dutta | 2016-02-02 |
| 9236483 | FinFET with backgate, without punchthrough, and with reduced fin height variation | Bin Yang, Xia Li, PR Chidambaram | 2016-01-12 |