Issued Patents All Time
Showing 101–125 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6849898 | Trench MIS device with active trench corners and thick bottom oxide | Frederick P. Giles, Kam Hong Lui, Kuo-In Chen, Kyle Terrill | 2005-02-01 |
| 6798020 | High-voltage lateral transistor with a multi-layered extended drain structure | Donald R. Disney | 2004-09-28 |
| 6764906 | Method for making trench mosfet having implanted drain-drift region | — | 2004-07-20 |
| 6709930 | Thicker oxide formation at the trench bottom by selective oxide deposition | Ben Chan, Kam Hong Lui, Christiana Yue, Ronald Wong, David Chang +5 more | 2004-03-23 |
| 6696342 | Small emitter and base-collector bi-polar transistor | Alexei Sadovinkov, Reda R. Razouk | 2004-02-24 |
| 6603188 | Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor | Alexei Sadovnikov, Reda R. Razouk | 2003-08-05 |
| 6600193 | Trench MOSFET having implanted drain-drift region | — | 2003-07-29 |
| 6569738 | Process for manufacturing trench gated MOSFET having drain/drift region | — | 2003-05-27 |
| 6555873 | High-voltage lateral transistor with a multi-layered extended drain structure | Donald R. Disney | 2003-04-29 |
| 6552889 | Current limiting technique for hybrid power MOSFET circuits | John Huang, Hamza Yilmaz, Wharton McDaniel, Kyle Terrill, Peter Tu Dang | 2003-04-22 |
| 6534366 | Method of fabricating trench-gated power MOSFET | Jacek Korec, Dorman C. Pitzer | 2003-03-18 |
| 6475848 | Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor | Alexei Sadovnikov, Reda R. Razouk | 2002-11-05 |
| 6380017 | Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor | Alexei Sadovnikov, Reda R. Razouk | 2002-04-30 |
| 6348712 | High density trench-gated power MOSFET | Jacek Korec, Dorman C. Pitzer | 2002-02-19 |
| 6239463 | Low resistance power MOSFET or other device containing silicon-germanium layer | Richard K. Williams, Wayne B. Grabowski, Michael E. Cornell | 2001-05-29 |
| 6140678 | Trench-gated power MOSFET with protective diode | Wayne B. Grabowski, Richard K. Williams | 2000-10-31 |
| 6084264 | Trench MOSFET having improved breakdown and on-resistance characteristics | — | 2000-07-04 |
| 6049108 | Trench-gated MOSFET with bidirectional voltage clamping | Richard K. Williams, Wayne B. Grabowski, Jacek Korec | 2000-04-11 |
| 6008520 | Trench MOSFET with heavily doped delta layer to provide low on- resistance | Richard K. Williams | 1999-12-28 |
| 5998834 | Long channel trench-gated power MOSFET having fully depleted body region | Richard K. Williams, Brian H. Floyd, Wayne B. Grabowski, Mike F. Chang | 1999-12-07 |
| 5895952 | Trench MOSFET with multi-resistivity drain to provide low on-resistance | Richard K. Williams | 1999-04-20 |
| 5689128 | High density trenched DMOS transistor | Fwu-Iuan Hshieh, Mike F. Chang, Kuo-In Chen, Richard K. Williams | 1997-11-18 |
| 5688725 | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance | Richard K. Williams | 1997-11-18 |
| 5674766 | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer | Richard K. Williams | 1997-10-07 |
| 5278076 | Method of marking a lateral mos controlled thyristor | — | 1994-01-11 |