Issued Patents All Time
Showing 76–100 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8203180 | Devices containing permanent charge | Amit Paul | 2012-06-19 |
| 8080848 | High voltage semiconductor device with lateral series capacitive structure | Robert K. Yang | 2011-12-20 |
| 8076719 | Semiconductor device structures and related processes | Jun Zeng | 2011-12-13 |
| 8058682 | Semiconductor device | — | 2011-11-15 |
| 7964913 | Power MOS transistor incorporating fixed charges that balance the charge in the drift region | — | 2011-06-21 |
| 7923804 | Edge termination with improved breakdown voltage | Jun Zeng, Shih-Tzung Su | 2011-04-12 |
| 7910439 | Super self-aligned trench MOSFET devices, methods, and systems | Jun Zeng | 2011-03-22 |
| 7911021 | Edge termination for semiconductor devices | Amit Paul, Jun Zeng | 2011-03-22 |
| 7843004 | Power MOSFET with recessed field plate | — | 2010-11-30 |
| 7795675 | Termination for trench MIS device | Kyle Terrill, Jainhai Qi, Qufei Chen | 2010-09-14 |
| 7435650 | Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide | Kyle Terrill, Jainhai Qi | 2008-10-14 |
| 7416947 | Method of fabricating trench MIS device with thick oxide layer in bottom of trench | — | 2008-08-26 |
| 7326995 | Trench MIS device having implanted drain-drift region and thick bottom oxide | King Owyang | 2008-02-05 |
| 7291884 | Trench MIS device having implanted drain-drift region and thick bottom oxide | Kyle Terrill, Jainhai Qi | 2007-11-06 |
| 7268032 | Termination for trench MIS device having implanted drain-drift region | Kyle Terrill, Jainhai Qi, Qufei Chen | 2007-09-11 |
| 7118953 | Process of fabricating termination region for trench MIS device | — | 2006-10-10 |
| 7045857 | Termination for trench MIS device having implanted drain-drift region | Kyle Terrill, Jainhai Qi, Qufei Chen | 2006-05-16 |
| 7033876 | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same | King Owyang | 2006-04-25 |
| 7012005 | Self-aligned differential oxidation in trenches by ion implantation | Karl Lichtenberger, Frederick P. Giles, Christiana Yue, Kyle Terrill, Deva Pattanayak +3 more | 2006-03-14 |
| 7009247 | Trench MIS device with thick oxide layer in bottom of gate contact trench | — | 2006-03-07 |
| 6927451 | Termination for trench MIS device having implanted drain-drift region | — | 2005-08-09 |
| 6921697 | Method for making trench MIS device with reduced gate-to-drain capacitance | Frederick P. Giles, Kam Hong Lui, Kuo-In Chen, Kyle Terrill | 2005-07-26 |
| 6903412 | Trench MIS device with graduated gate oxide layer | Christiana Yue, Frederick P. Giles, Kam Hong Lui, Kuo-In Chen, Kyle Terrill +1 more | 2005-06-07 |
| 6882000 | Trench MIS device with reduced gate-to-drain capacitance | Frederick P. Giles, Kam Hong Lui, Kuo-In Chen, Kyle Terrill | 2005-04-19 |
| 6875657 | Method of fabricating trench MIS device with graduated gate oxide layer | Christiana Yue, Frederick P. Giles, Kam Hong Lui, Kuo-In Chen, Kyle Terrill +1 more | 2005-04-05 |