Issued Patents All Time
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7494876 | Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same | Kam Hong Lui | 2009-02-24 |
| 7012005 | Self-aligned differential oxidation in trenches by ion implantation | Karl Lichtenberger, Christiana Yue, Kyle Terrill, Mohamed N. Darwish, Deva Pattanayak +3 more | 2006-03-14 |
| 6921697 | Method for making trench MIS device with reduced gate-to-drain capacitance | Mohamed N. Darwish, Kam Hong Lui, Kuo-In Chen, Kyle Terrill | 2005-07-26 |
| 6903412 | Trench MIS device with graduated gate oxide layer | Mohamed N. Darwish, Christiana Yue, Kam Hong Lui, Kuo-In Chen, Kyle Terrill +1 more | 2005-06-07 |
| 6882000 | Trench MIS device with reduced gate-to-drain capacitance | Mohamed N. Darwish, Kam Hong Lui, Kuo-In Chen, Kyle Terrill | 2005-04-19 |
| 6875657 | Method of fabricating trench MIS device with graduated gate oxide layer | Christiana Yue, Mohamed N. Darwish, Kam Hong Lui, Kuo-In Chen, Kyle Terrill +1 more | 2005-04-05 |
| 6849898 | Trench MIS device with active trench corners and thick bottom oxide | Mohamed N. Darwish, Kam Hong Lui, Kuo-In Chen, Kyle Terrill | 2005-02-01 |
| 6709930 | Thicker oxide formation at the trench bottom by selective oxide deposition | Ben Chan, Kam Hong Lui, Christiana Yue, Ronald Wong, David Chang +5 more | 2004-03-23 |