Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10032901 | Semiconductor device with trench-like feed-throughs | Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro +5 more | 2018-07-24 |
| 9306056 | Semiconductor device with trench-like feed-throughs | Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro +5 more | 2016-04-05 |
| 8883580 | Trench metal oxide semiconductor with recessed trench material and remote contacts | Deva Pattanayak, Kyle Terrill, Sharon Shi, Misha Lee, Yuming Bai +1 more | 2014-11-11 |
| 8368126 | Trench metal oxide semiconductor with recessed trench material and remote contacts | Deva Pattanayak, Kyle Terrill, Sharon Shi, Misha Lee, Yuming Bai +1 more | 2013-02-05 |
| 8183629 | Stacked trench metal-oxide-semiconductor field effect transistor device | Deva Pattanayak, Jason Qi, Yuming Bai, Ronald Wong | 2012-05-22 |
| 7704836 | Method of fabricating super trench MOSFET including buried source electrode | Deva Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu +2 more | 2010-04-27 |
| 7557409 | Super trench MOSFET including buried source electrode | Deva Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu +2 more | 2009-07-07 |
| 7494876 | Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same | Frederick P. Giles | 2009-02-24 |
| 7344945 | Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor | Deva Pattanayak, Jason Qi, Yuming Bai, Ronald Wong | 2008-03-18 |
| 7183610 | Super trench MOSFET including buried source electrode and method of fabricating the same | Deva Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu +2 more | 2007-02-27 |
| 7012005 | Self-aligned differential oxidation in trenches by ion implantation | Karl Lichtenberger, Frederick P. Giles, Christiana Yue, Kyle Terrill, Mohamed N. Darwish +3 more | 2006-03-14 |
| 6921697 | Method for making trench MIS device with reduced gate-to-drain capacitance | Mohamed N. Darwish, Frederick P. Giles, Kuo-In Chen, Kyle Terrill | 2005-07-26 |
| 6906380 | Drain side gate trench metal-oxide-semiconductor field effect transistor | Deva Pattanayak, Jason Qi, Yuming Bai, Ronald Wong | 2005-06-14 |
| 6903412 | Trench MIS device with graduated gate oxide layer | Mohamed N. Darwish, Christiana Yue, Frederick P. Giles, Kuo-In Chen, Kyle Terrill +1 more | 2005-06-07 |
| 6882000 | Trench MIS device with reduced gate-to-drain capacitance | Mohamed N. Darwish, Frederick P. Giles, Kuo-In Chen, Kyle Terrill | 2005-04-19 |
| 6875657 | Method of fabricating trench MIS device with graduated gate oxide layer | Christiana Yue, Mohamed N. Darwish, Frederick P. Giles, Kuo-In Chen, Kyle Terrill +1 more | 2005-04-05 |
| 6849898 | Trench MIS device with active trench corners and thick bottom oxide | Mohamed N. Darwish, Frederick P. Giles, Kuo-In Chen, Kyle Terrill | 2005-02-01 |
| 6709930 | Thicker oxide formation at the trench bottom by selective oxide deposition | Ben Chan, Christiana Yue, Ronald Wong, David Chang, Frederick P. Giles +5 more | 2004-03-23 |