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Wayne B. Grabowski — 32 Patents

PIPower Integrations: 12 patents #40 of 206Top 20%

AIAdvanced Analogic Technologies Incorporated: 10 patents #8 of 28Top 30%

SISiliconix Incorporated: 9 patents #16 of 125Top 15%

Los Altos, CA: #355 of 3,651 inventorsTop 10%

California: #15,919 of 386,348 inventorsTop 5%

Overall (All Time): #110,428 of 4,157,543Top 3%

32 Patents All Time

Wayne B. Grabowski has been granted 32 US patents while listed as an inventor at Power Integrations. The first was granted in 1993 and the most recent in September 2017. Wayne B. Grabowski ranks #110,428 of 4,157,543 US inventors in our database (top 2.7%). Patent records list Wayne B. Grabowski in Los Altos, CA, US.

Patents per Year

Issued Patents All Time

Showing 1–25 of 32 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
9768274	Laterally-graded doping of materials	Kuo-Chang Yang, Kamal Raj Varadarajan, Sujit Banerjee, Vijay Parthasarathy	2017-09-19	$6,788,000
9472630	Deposit/etch for tapered oxide	Vijay Parthasarathy, Sujit Banerjee	2016-10-18	$5,082,000
8765609	Deposit/etch for tapered oxide	Vijay Parthasarathy, Sujit Banerjee	2014-07-01	$3,706,000
8552493	Segmented pillar layout for a high-voltage vertical transistor	Vijay Parthasarathy	2013-10-08	$3,871,000
7816731	Segmented pillar layout for a high-voltage vertical transistor	Vijay Parthasarathy	2010-10-19	$7,017,000
7557406	Segmented pillar layout for a high-voltage vertical transistor	Vijay Parthasarathy	2009-07-07	$6,588,000
7282412	Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same	Richard K. Williams	2007-10-16	$5,621,000
7276411	Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same	Richard K. Williams	2007-10-02	$2,790,000
7238568	Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same	Richard K. Williams	2007-07-03	$5,061,000
7115958	Lateral power MOSFET for high switching speeds	Donald R. Disney	2006-10-03
7052963	Method of forming trench transistor with chained implanted body including a plurality of implantation with different energies	Richard K. Williams	2006-05-30	$5,593,000
6924198	Self-aligned trench transistor using etched contact	Richard K. Williams	2005-08-02
6900100	Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same	Richard K. Williams	2005-05-31
6825536	Lateral power MOSFET for high switching speeds	Donald R. Disney	2004-11-30	$6,645,000
6756274	Fabrication process for a super-self-aligned trench-gated DMOS with reduced on-resistance	Richard K. Williams	2004-06-29
6750507	Super-self-aligned trench-gated DMOS with reduced on-resistance	Richard K. Williams	2004-06-15
6555883	Lateral power MOSFET for high switching speeds	Donald R. Disney	2003-04-29	$5,036,000
6413822	Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer	Richard K. Williams	2002-07-02
6291298	Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses	Richard K. Williams	2001-09-18
6277695	Method of forming vertical planar DMOSFET with self-aligned contact	Richard K. Williams, Sung-Shan Tai, Dorman C. Pitzer, Anthony C. Tsui, Mike F. Chang	2001-08-21	$15,142,000
6268242	Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact	Richard K. Williams	2001-07-31
6239463	Low resistance power MOSFET or other device containing silicon-germanium layer	Richard K. Williams, Mohamed N. Darwish, Michael E. Cornell	2001-05-29	$19,598,000
6204533	Vertical trench-gated power MOSFET having stripe geometry and high cell density	Richard K. Williams	2001-03-20	$19,581,000
6140678	Trench-gated power MOSFET with protective diode	Richard K. Williams, Mohamed N. Darwish	2000-10-31	$27,816,000
6078090	Trench-gated Schottky diode with integral clamping diode	Richard K. Williams, Shekar S. Malikarjunaswamy, Jacek Korec	2000-06-20	$51,644,000