YM

Yuuichi Mikata

KT Kabushiki Kaisha Toshiba: 43 patents #442 of 21,451Top 3%
TL Tokyo Electron Limited: 4 patents #1,723 of 5,567Top 35%
EB Ebara: 2 patents #752 of 1,611Top 50%
Rohm Co.: 1 patents #1,438 of 2,292Top 65%
SC Sanyo Electric Co.: 1 patents #3,644 of 6,347Top 60%
TS Tokyo Electron Sagami: 1 patents #39 of 81Top 50%
Overall (All Time): #63,526 of 4,157,543Top 2%
46
Patents All Time

Issued Patents All Time

Showing 26–46 of 46 patents

Patent #TitleCo-InventorsDate
5612236 Method of forming a silicon semiconductor device using doping during deposition of polysilicon Toshiro Usami, Katsunori Ishihara 1997-03-18
5582640 Semiconductor device and its fabricating method Takako Okada, Shigeru Kambayashi, Moto Yabuki, Shinji Onga, Yoshitaka Tsunashima +1 more 1996-12-10
5561087 Method of forming a uniform thin film by cooling wafers during CVD 1996-10-01
5380370 Method of cleaning reaction tube Reiji Niino, Yoshiyuki Fujita, Hideki Lee, Yasuo Imamura, Toshiharu Nishimura +3 more 1995-01-10
5378652 Method of making a through hole in multi-layer insulating films Shuichi Samata, Toshiro Usami 1995-01-03
5370371 Heat treatment apparatus Katsushin Miyagi, Shingo Watanabe, Katsuya Okumura 1994-12-06
5316472 Vertical boat used for heat treatment of semiconductor wafer and vertical heat treatment apparatus Reiji Niino, Isao Siratani, Yutaka Simada, Hiroki Fukusima, Hirofumi Kitayama +1 more 1994-05-31
5291058 Semiconductor device silicon via fill formed in multiple dielectric layers Shuichi Samata, Toshiro Usami 1994-03-01
5286523 Method of processing substrates and substrate processing apparatus Tetsuo Matsuda, Akimichi Yonekura 1994-02-15
5250463 Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate Katsunori Ishihara, Katsuya Okumura 1993-10-05
5238859 Method of manufacturing semiconductor device Hiroyuki Kamijo, Toshiro Usami 1993-08-24
5237196 Semiconductor device and method for manufacturing the same Katsunori Ishihara 1993-08-17
5234869 Method of manufacturing silicon nitride film Takahiko Moriya 1993-08-10
5181088 Vertical field effect transistor with an extended polysilicon channel region Toshiro Usami 1993-01-19
5149666 Method of manufacturing a semiconductor memory device having a floating gate electrode composed of 2-10 silicon grains Toshiro Usami 1992-09-22
5032535 Method of manufacturing semiconductor device Hiroyuki Kamijo, Toshiro Usami 1991-07-16
5031010 Semiconductor memory device and method of manufacturing the same Toshiro Usami 1991-07-09
4966866 Method for manufacturing semiconductor device having gate electrodes of different conductivity types Shuichi Samata 1990-10-30
4931405 Method for manufacturing a semiconductor device and suppressing the generation of bulk microdefects near the substrate surface layer Hiroyuki Kamijo 1990-06-05
4721991 Refractory silicide conductor containing iron Reiji Ohtaki, Masanobu Ogino 1988-01-26
4597159 Method of manufacturing SiO.sub.2 -Si interface for floating gate semiconductor device Toshiro Usami, Kazuyoshi Shinada 1986-07-01