TM

Takahiko Moriya

KT Kabushiki Kaisha Toshiba: 12 patents #2,533 of 21,451Top 15%
TL Tokyo Electron Limited: 4 patents #1,723 of 5,567Top 35%
TS Tokyo Electron Sagami: 2 patents #22 of 81Top 30%
TO Toshiba: 1 patents #1,121 of 2,688Top 45%
VA Vlsi Technology Research Association: 1 patents #21 of 70Top 30%
Overall (All Time): #303,125 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
5637153 Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus Reiji Niino, Yoshiyuki Fujita, Hideki Lee, Yasuo Imamura, Toshiharu Nishimura +4 more 1997-06-10
5580615 Method of forming a conductive film on an insulating region of a substrate Hitoshi Itoh 1996-12-03
5380370 Method of cleaning reaction tube Reiji Niino, Yoshiyuki Fujita, Hideki Lee, Yasuo Imamura, Toshiharu Nishimura +3 more 1995-01-10
5252133 Vertically oriented CVD apparatus including gas inlet tube having gas injection holes Shinji Miyazaki, Yuichi Mikata, Reiji Niino, Motohiko Nishimura 1993-10-12
5234869 Method of manufacturing silicon nitride film Yuuichi Mikata 1993-08-10
5223455 Method of forming refractory metal film Hitoshi Itoh 1993-06-29
5048800 Vertical heat treatment apparatus Shinji Miyazaki, Yasushi Yagi, Mituaki Komino, Katuhiko Iwabuchi 1991-09-17
5015330 Film forming method and film forming device Katsuya Okumura, Shinji Miyazaki, Yoshio Kumagai, Susumu Tanaka 1991-05-14
4957880 Method for producing semiconductor device including a refractory metal pattern Hitoshi Itoh 1990-09-18
4746549 Method for forming thin film of refractory material Hitoshi Ito 1988-05-24
4699801 Semiconductor device Hitoshi Ito 1987-10-13
4650698 Method of forming a thin film of a metal or metal compound on a substrate Saburo Nakada 1987-03-17
4597167 Method of forming a metal film on a selectively diffused layer Saburo Nakada 1986-07-01
4582563 Process for forming multi-layer interconnections Yoshikazu Hazuki 1986-04-15
4377438 Method for producing semiconductor device Yoshikazu Hazuki, Masahiro Kashiwagi 1983-03-22
4283439 Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode Iwao Higashinakagawa, Syohei Sima 1981-08-11