KS

Kazuyoshi Shinada

KT Kabushiki Kaisha Toshiba: 8 patents #3,802 of 21,451Top 20%
VA Vlsi Technology Research Association: 3 patents #3 of 70Top 5%
YC Yanmar Diesel Engine Co.: 3 patents #3 of 96Top 4%
TO Toshiba: 1 patents #1,121 of 2,688Top 45%
Overall (All Time): #327,102 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
7115471 Method of manufacturing semiconductor device including nonvolatile memory Akira Kimitsuka 2006-10-03
6478646 Drive device of inboard and outboard engines Teruhito Fukuoka, Yuji Hashimoto 2002-11-12
6002609 Semiconductor device having a security circuit for preventing illegal access 1999-12-14
5200636 Semiconductor device having E.sup.2 PROM and EPROM in one chip Teruo Uemura, Takahide Mizutani, Naoki Hanada, Tatsuo Mori 1993-04-06
5094967 Method for manufacturing semiconductor device having a non-volatile memory cell and logic regions by using a CVD second insulating film Masayuki Yoshida, Takahide Mizutani, Naoki Hanada 1992-03-10
4930105 Nonvolatile semiconductor memory device with a double gate structure Osamu Matsumoto, Tadashi Maruyama, Hiroyoshi Murata, Isao Abe, Tomohisa Shigematsu +2 more 1990-05-29
4743564 Method for manufacturing a complementary MOS type semiconductor device Masaki Sato 1988-05-10
4597159 Method of manufacturing SiO.sub.2 -Si interface for floating gate semiconductor device Toshiro Usami, Yuuichi Mikata 1986-07-01
4597824 Method of producing semiconductor device Masaki Sato 1986-07-01
4545469 Cone clutch Yoshihiro Yogome, Yuuji Kobashi 1985-10-08
4504332 Method of making a bipolar transistor 1985-03-12
4464128 Seal arrangement between an outdrive unit and a hull of a vessel Kinichi Aso 1984-08-07
4412378 Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation 1983-11-01
4377902 Method of manufacturing semiconductor device using laser beam crystallized poly/amorphous layer Satoshi Shinozaki 1983-03-29
4338139 Method of forming Schottky-I.sup.2 L devices by implantation and laser bombardment 1982-07-06