KS

Kyoichi Suguro

KT Kabushiki Kaisha Toshiba: 132 patents #44 of 21,451Top 1%
Fujitsu Limited: 2 patents #10,930 of 24,456Top 45%
TS Toshiba Electronic Devices & Storage: 2 patents #310 of 900Top 35%
Toshiba Memory: 2 patents #853 of 1,971Top 45%
TL Tokyo Electron Limited: 1 patents #3,538 of 5,567Top 65%
AT Agency Of Industrial Science And Technology: 1 patents #568 of 1,778Top 35%
TL Tokyo Electron Yamanashi Limited: 1 patents #52 of 138Top 40%
Overall (All Time): #7,390 of 4,157,543Top 1%
138
Patents All Time

Issued Patents All Time

Showing 126–138 of 138 patents

Patent #TitleCo-InventorsDate
5424246 Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide Mie Matsuo, Haruo Okano, Nobuo Hayasaka, Hideshi Miyajima, Jun Wada 1995-06-13
5409862 Method for making aluminum single crystal interconnections on insulators Junichi Wada, Hisashi Kaneko, Nobuo Hayasaka, Haruo Okano 1995-04-25
5316977 Method of manufacturing a semiconductor device comprising metal silicide Iwao Kunishima 1994-05-31
5304510 Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited Haruo Okano 1994-04-19
5217923 Method of fabricating a semiconductor device having silicided source/drain regions 1993-06-08
5192714 Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited Haruo Okano 1993-03-09
5189503 High dielectric capacitor having low current leakage Keitaro Imai, Mitsutoshi Koyama, Kikuo Yamabe 1993-02-23
5168332 Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus Iwao Kunishima, Tomonori Aoyama 1992-12-01
5162263 Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus Iwao Kunishima, Tomonori Aoyama 1992-11-10
4959745 Capacitor and method for producing the same 1990-09-25
4912542 Semiconductor device and method of manufacturing the same 1990-03-27
4746803 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same Tomoyasu Inoue, Hiroyuki Tango, Iwao Higashinakagawa, Toshihiko Hamasaki 1988-05-24
4662949 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam Tomoyasu Inoue, Hiroyuki Tango, Iwao Higashinakagawa, Toshihiko Hamasaki 1987-05-05