JW

Jun Wada

KT Kabushiki Kaisha Toshiba: 7 patents #4,294 of 21,451Top 25%
Fujitsu Limited: 3 patents #8,614 of 24,456Top 40%
FA Fanuc: 3 patents #813 of 1,735Top 50%
FL Fujitsu Quantum Devices Limited: 1 patents #52 of 110Top 50%
NU National University Corporation Okayama University: 1 patents #90 of 315Top 30%
NL Nippon Kasei Chemical Company Limited: 1 patents #20 of 37Top 55%
ND Nitto Denko: 1 patents #1,580 of 2,479Top 65%
Overall (All Time): #292,119 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
11835516 Determination method and kit for determining possibility of reduced renal function Koki Mise, Masao Yamada 2023-12-05
11389967 Three-dimensional shape measurement system and three-dimensional shape measurement method 2022-07-19
10722992 Workpiece placement system for placing workpiece in containment area or on jig 2020-07-28
10518417 Article retrieval system 2019-12-31
9343402 Semiconductor device having Ti- and N-containing layer, and manufacturing method of same Atsuko Sakata 2016-05-17
9129970 Semiconductor device having oxidized Ti- and N-containing layer, and manufacturing of the same Atsuko Sakata 2015-09-08
6639300 Semiconductor integrated circuit having an integrated resistance region 2003-10-28
6242327 Compound semiconductor device having a reduced source resistance Mitsunori Yokoyama, Hitoshi Tanaka 2001-06-05
6054770 Electric solid state device and method for manufacturing the device Hiroshi Toyoda, Masahiko Hasunuma, Hisashi Kaneko 2000-04-25
5923072 Semiconductor device with metallic protective film Toshihiro Ogihara 1999-07-13
5731634 Semiconductor device having a metal film formed in a groove in an insulating film Mie Matsuo, Haruo Okano, Nobuo Hayasaka, Kyoichi Suguro, Hideshi Miyajima 1998-03-24
5629236 Method of manufacture of semiconductor device Hisashi Kaneko, Nobuo Hayasaka 1997-05-13
5561082 Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide Mie Matsuo, Haruo Okano, Nobuo Hayasaka, Kyoichi Suguro, Hideshi Miyajima 1996-10-01
5532507 MES field effect transistor possessing lightly doped drain 1996-07-02
5424246 Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide Mie Matsuo, Haruo Okano, Nobuo Hayasaka, Kyoichi Suguro, Hideshi Miyajima 1995-06-13
5076963 Pastes for forming a luminescent layer and insulator layer of electroluminescent element and electroluminescent element using such pastes Akinori Kameyama, Yutaka Nakabayashi 1991-12-31