TI

Tomoyasu Inoue

TO Toshiba: 2 patents #606 of 2,688Top 25%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
AT Agency Of Industrial Science And Technology: 1 patents #568 of 1,778Top 35%
Overall (All Time): #1,063,837 of 4,157,543Top 30%
5
Patents All Time

Issued Patents All Time

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
4746803 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same Hiroyuki Tango, Kyoichi Suguro, Iwao Higashinakagawa, Toshihiko Hamasaki 1988-05-24
4662949 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam Hiroyuki Tango, Kyoichi Suguro, Iwao Higashinakagawa, Toshihiko Hamasaki 1987-05-05
4656054 Method of manufacturing a semiconductor device involving a capacitor 1987-04-07
4498226 Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy Kenji Shibata 1985-02-12
4472729 Recrystallized three dimensional integrated circuit Kenji Shibata 1984-09-18