TH

Toshihiko Hamasaki

KT Kabushiki Kaisha Toshiba: 7 patents #4,294 of 21,451Top 25%
BU Burr-Brown: 6 patents #13 of 115Top 15%
TI Texas Instruments: 2 patents #5,248 of 12,488Top 45%
AT Agency Of Industrial Science And Technology: 1 patents #568 of 1,778Top 35%
Overall (All Time): #280,137 of 4,157,543Top 7%
17
Patents All Time

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
6489909 Method and apparatus for improving S/N ratio in digital-to-analog conversion of pulse density modulated (PDM) signal Shigetoshi Nakao 2002-12-03
6469648 Digital-to analog-converting method and digital-to analog converter employing common weight generating elements Shigetoshi Nakao 2002-10-22
5977895 Waveform shaping circuit for function circuit and high order delta sigma modulator Toshio Murota 1999-11-02
5905427 Integrated circuit resistor array Hitoshi Terasawa, Toshio Murota, Keiji Matsuki 1999-05-18
5856799 Rotation system for correction of weighting element errors in digital-to-analog converter Yoshiaki Shinohara, Toshio Murota, Ei-ichi Arihara, Kyoji Matsusako 1999-01-05
5815051 Differential filter circuit and integrated circuit structure therefor Hitoshi Terasawa, Toshio Murota 1998-09-29
5694065 Switching control circuitry for low noise CMOS inverter Yoshiaki Shinohara, Toshio Murota, Ei-ichi Arihara 1997-12-02
5682162 Oversampling digital-to-analog converter with auto-muting feature Yoshiaki Shinohara 1997-10-28
5250448 Method of fabricating a miniaturized heterojunction bipolar transistor Hideki Satake 1993-10-05
5175603 Bipolar transistor 1992-12-29
5094964 Method for manufacturing a bipolar semiconductor device 1992-03-10
5083033 Method of depositing an insulating film and a focusing ion beam apparatus Haruki Komano, Tadahiro Takigawa 1992-01-21
4996581 Bipolar transistor 1991-02-26
4968635 Method of forming emitter of a bipolar transistor in monocrystallized film 1990-11-06
4830972 Method of manufacturing bipolar transistor 1989-05-16
4746803 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same Tomoyasu Inoue, Hiroyuki Tango, Kyoichi Suguro, Iwao Higashinakagawa 1988-05-24
4662949 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam Tomoyasu Inoue, Hiroyuki Tango, Kyoichi Suguro, Iwao Higashinakagawa 1987-05-05