Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9159834 | Faceted semiconductor nanowire | Kangguo Cheng, Juntao Li, Zhen Zhang | 2015-10-13 |
| 8900935 | Deposition on a nanowire using atomic layer deposition | Dechao Guo, Zhengwen Li, Kejia Wang, Zhen Zhang | 2014-12-02 |
| 8865556 | Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer | Joseph S. Newbury, Kenneth P. Rodbell, Zhen Zhang | 2014-10-21 |
| 8809153 | Graphene transistors with self-aligned gates | Ali Afzali-Ardakani, Phaedon Avouris, Damon B. Farmer, Yu-Ming Lin | 2014-08-19 |
| 8803130 | Graphene transistors with self-aligned gates | Ali Afzali-Ardakani, Phaedon Avouris, Damon B. Farmer, Yu-Ming Lin | 2014-08-12 |
| 8772906 | Thermally insulated phase change material cells | Matthew J. BrightSky, Roger W. Cheek, Chung H. Lam, Eric A. Joseph, Bipin Rajendran +1 more | 2014-07-08 |
| 8753965 | Graphene transistor with a self-aligned gate | Phaedon Avouris, Damon B. Farmer, Yu-Ming Lin | 2014-06-17 |
| 8680512 | Graphene transistor with a self-aligned gate | Phaedon Avouris, Damon B. Farmer, Yu-Ming Lin | 2014-03-25 |
| 8598664 | Field effect transistor (FET) and method of forming the FET without damaging the wafer surface | Kangguo Cheng, Bruce B. Doris | 2013-12-03 |
| 8536675 | Thermally insulated phase change material memory cells | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran +1 more | 2013-09-17 |
| 8466006 | Thermally insulated phase material cells | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran +1 more | 2013-06-18 |
| 8404589 | Silicide contact formation | Andrew J. Kellock, Christian Lavoie, Ahmet S. Ozcan, Stephen M. Rossnagel, Bin Yang +2 more | 2013-03-26 |
| 8344358 | Graphene transistor with a self-aligned gate | Phaedon Avouris, Damon B. Farmer, Yu-Ming Lin | 2013-01-01 |
| 8338225 | Method to reduce a via area in a phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2012-12-25 |
| 8324110 | Field effect transistor (FET) and method of forming the FET without damaging the wafer surface | Kangguo Cheng, Bruce B. Doris | 2012-12-04 |
| 8138056 | Thermally insulated phase change material memory cells with pillar structure | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran +1 more | 2012-03-20 |
| 8101456 | Method to reduce a via area in a phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2012-01-24 |
| 8064247 | Rewritable memory device based on segregation/re-absorption | Ming-Hsiu Lee, Chieh-Fang Chen, Yen-Hao Shih | 2011-11-22 |
| 7985654 | Planarization stop layer in phase change memory integration | Matthew J. Breitwisch | 2011-07-26 |
| 7868313 | Phase change memory device and method of manufacture | Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung, Bipin Rajendran, Alejandro G. Schrott | 2011-01-11 |