Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12131912 | Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures | Muralidhar S. Ambati, Moosung Kim | 2024-10-29 |
| 12094881 | Arsenic-doped epitaxial source/drain regions for NMOS | Anand S. Murthy, Ryan Keech, Nicholas G. Minutillo | 2024-09-17 |
| 11875999 | Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures | Muralidhar S. Ambati, Moosung Kim | 2024-01-16 |
| 11610889 | Arsenic-doped epitaxial, source/drain regions for NMOS | Anand S. Murthy, Ryan Keech, Nicholas G. Minutillo | 2023-03-21 |
| 11417531 | Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures | Muralidhar S. Ambati, Moosung Kim | 2022-08-16 |
| 11101268 | Transistors employing non-selective deposition of source/drain material | Karthik Jambunathan, Scott Maddox, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy +1 more | 2021-08-24 |
| 11011620 | Techniques for increasing channel region tensile strain in n-MOS devices | Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Karthik Jambunathan, Glenn A. Glass +2 more | 2021-05-18 |
| 10950453 | Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures | Muralidhar S. Ambati, Moosung Kim | 2021-03-16 |
| 10643855 | Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures | Muralidhar S. Ambati, Moosung Kim | 2020-05-05 |
| 10204794 | Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures | Muralidhar S. Ambati, Moosung Kim | 2019-02-12 |
| 10147634 | Techniques for trench isolation using flowable dielectric materials | Jeanne Luce, Sang-Won Park, Dennis G. Hanken | 2018-12-04 |
| 9923054 | Fin structure having hard mask etch stop layers underneath gate sidewall spacers | Bernard Sell, Tahir Ghani | 2018-03-20 |
| 9406547 | Techniques for trench isolation using flowable dielectric materials | Jeanne Luce, Sang-Won Park, Dennis G. Hanken | 2016-08-02 |
| 9048260 | Method of forming a semiconductor device with tall fins and using hard mask etch stops | Bernard Sell, Tahir Ghani | 2015-06-02 |