Issued Patents All Time
Showing 25 most recent of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7041714 | Dental adhesive | Hiroshi Takeshita, Hideki Kazama | 2006-05-09 |
| 6756600 | Ion implantation with improved ion source life expectancy | Che-Hoo Ng, Jaime M. Reyes, Jinning Liu, Sandeep Mehta | 2004-06-29 |
| 6642134 | Semiconductor processing employing a semiconductor spacer | Scott Luning | 2003-11-04 |
| 6514833 | Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI groove | Che-Hoo Ng | 2003-02-04 |
| 6506640 | Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through | Deepak Nayak, Ming-Yin Hao | 2003-01-14 |
| 6482725 | Gate formation method for reduced poly-depletion and boron penetration | — | 2002-11-19 |
| 6475868 | Oxygen implantation for reduction of junction capacitance in MOS transistors | Ming-Yin Hao, Asim A. Selcuk, Richard P. Rouse | 2002-11-05 |
| 6472283 | MOS transistor processing utilizing UV-nitride removable spacer and HF etch | Srinath Krishman, Ming-Yin Hao, Effiong Ibok | 2002-10-29 |
| 6455385 | Semiconductor fabrication with multiple low dose implant | Roger Alvis | 2002-09-24 |
| 6444550 | Laser tailoring retrograde channel profile in surfaces | Ming-Yin Hao | 2002-09-03 |
| 6429083 | Removable spacer technology using ion implantation to augment etch rate differences of spacer materials | Srinath Krishnan, Ming-Yin Hao, Effiong Ibok | 2002-08-06 |
| 6426279 | Epitaxial delta doping for retrograde channel profile | Carl Robert Huster | 2002-07-30 |
| 6423601 | Retrograde well structure formation by nitrogen implantation | Ming-Yin Hao | 2002-07-23 |
| 6410393 | Semiconductor device with asymmetric channel dopant profile | Ming-Yin Hao | 2002-06-25 |
| 6403433 | Source/drain doping technique for ultra-thin-body SOI MOS transistors | Bin Yu, Jonathan Kluth | 2002-06-11 |
| 6395606 | MOSFET with metal in gate for reduced gate resistance | Carl Robert Huster, Ognjen Milic-Strkalj | 2002-05-28 |
| 6372582 | Indium retrograde channel doping for improved gate oxide reliability | Richard P. Rouse, Ming-Yin Hao, Effiong Ibok | 2002-04-16 |
| 6355528 | Method to form narrow structure using double-damascene process | Scott Luning, Tim Thurgate | 2002-03-12 |
| 6344396 | Removable spacer technology using ion implantation for forming asymmetric MOS transistors | Srinath Krishman, Ming-Yin Hao, Effiong Ibok | 2002-02-05 |
| 6342423 | MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch | Srinath Krishnan, Ming-Yin Hao, Effiong Ibok | 2002-01-29 |
| 6337260 | Use of knocked-on oxygen atoms for reduction of transient enhanced diffusion | — | 2002-01-08 |
| 6316319 | Method of manufacturing a semiconductor device having shallow junctions | Dong-Hyuk Ju | 2001-11-13 |
| 6277698 | Method of manufacturing semiconductor devices having uniform, fully doped gate electrodes | Dong-Hyuk Ju, David Wu | 2001-08-21 |
| 6265291 | Circuit fabrication method which optimizes source/drain contact resistance | Bin Yu | 2001-07-24 |
| 6245623 | CMOS semiconductor device containing N-channel transistor having shallow LDD junctions | Dong-Hyuk Ju | 2001-06-12 |