Issued Patents All Time
Showing 76–100 of 270 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8883655 | Atomic layer deposition of metal oxide materials for memory applications | Yun Wang, Vidyut Gopal, Imran Hashim, Dipankar Pramanik | 2014-11-11 |
| 8882914 | Processing substrates using site-isolated processing | David E. Lazovsky, Sandra G. Malhotra | 2014-11-11 |
| 8877550 | Methods for forming resistive switching memory elements by heating deposited layers | Pragati Kumar, Sean Barstow, Sunil Shanker | 2014-11-04 |
| 8878151 | Multistate nonvolatile memory elements | — | 2014-11-04 |
| 8878152 | Nonvolatile resistive memory element with an integrated oxygen isolation structure | Yun Wang, Imran Hashim, Dipankar Pramanik | 2014-11-04 |
| 8871860 | Methods for coating a substrate with an amphiphilic compound | Anh Duong, Zachary Fresco, Nitin Kumar, Chi-I Lang, Jinhong Tong +1 more | 2014-10-28 |
| 8872151 | Surface treatment to improve resistive-switching characteristics | Michael Miller, Xiying Costa, Tanmay Kumar, Prashant B. Phatak, April D. Schricker | 2014-10-28 |
| 8872268 | Controlled localized defect paths for resistive memories | Michael Miller, Prashant B. Phatak | 2014-10-28 |
| 8873276 | Resistive-switching nonvolatile memory elements | Pragati Kumar, Sean Barstow, Sandra G. Malhotra | 2014-10-28 |
| 8866121 | Current-limiting layer and a current-reducing layer in a memory device | Yun Wang, Imran Hashim | 2014-10-21 |
| 8865518 | Methods for forming resistive switching memory elements | Nitin Kumar, Chi-I Lang, Zhi-Wen Sun, Jihong Tong | 2014-10-21 |
| 8859427 | Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing | Bob Kong, Chi-I Lang, Zhi-Wen Sun, Jinhong Tong | 2014-10-14 |
| 8853099 | Nonvolatile resistive memory element with a metal nitride containing switching layer | Yun Wang, Imran Hashim, Tim Minvielle, Takeshi Yamaguchi | 2014-10-07 |
| 8852996 | Carbon doped resistive switching layers | Yun Wang, Tim Minvielle, Takeshi Yamaguchi | 2014-10-07 |
| 8841745 | Stress-engineered resistance-change memory device | Michael Miller, Prashant B. Phatak | 2014-09-23 |
| 8836365 | Apparatus and method for testing electromigration in semiconductor devices | Yun Wang, Chi-I Lang | 2014-09-16 |
| 8836123 | Methods for discretized formation of masking and capping layers on a substrate | David E. Lazovsky, Thomas R. Boussie, Alexander Gorer | 2014-09-16 |
| 8821987 | Combinatorial processing using a remote plasma source | Sunil Shanker, Chi-I Lang, Sandip Niyogi | 2014-09-02 |
| 8817524 | Resistive random access memory cells having metal alloy current limiting layers | Yun Wang, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Takeshi Yamaguchi | 2014-08-26 |
| 8816317 | Non-volatile resistive switching memories formed using anodization | Alexander Gorer, Igor Ivanov, Prashant B. Phatak | 2014-08-26 |
| 8815753 | Molecular self-assembly in substrate processing | Majid Keshavarz, David E. Lazovsky | 2014-08-26 |
| 8815013 | Method and system for isolated and discretized process sequence integration | Richard Endo, James Tsung | 2014-08-26 |
| 8809205 | Sequential atomic layer deposition of electrodes and resistive switching components | Yun Wang, Tim Minvielle, Takeshi Yamaguchi | 2014-08-19 |
| 8809159 | Radiation enhanced resistive switching layers | Yun Wang, Tim Minvielle, Takeshi Yamaguchi | 2014-08-19 |
| 8803124 | Creating an embedded reram memory from a high-K metal gate transistor structure | Dipankar Pramanik, David E. Lazovsky | 2014-08-12 |