Issued Patents All Time
Showing 26–50 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra +3 more | 2020-05-05 |
| 10622448 | Transistors including retracted raised source/drain to reduce parasitic capacitances | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung | 2020-04-14 |
| 10593785 | Transistors having ultra thin fin profiles and their methods of fabrication | Willy Rachmady, Van H. Le, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more | 2020-03-17 |
| 10580895 | Wide band gap transistors on non-native semiconductor substrates | Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2020-03-03 |
| 10574187 | Envelope-tracking control techniques for highly-efficient RF power amplifiers | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung | 2020-02-25 |
| 10553689 | Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung | 2020-02-04 |
| 10546927 | Self-aligned transistor structures enabling ultra-short channel lengths | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung | 2020-01-28 |
| 10475888 | Integration of III-V devices on Si wafers | Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +1 more | 2019-11-12 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +3 more | 2019-10-01 |
| 10388777 | Heteroepitaxial structures with high temperature stable substrate interface material | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau | 2019-08-20 |
| 10347544 | Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Seung Hoon Sung | 2019-07-09 |
| 10325774 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Han Wui Then, Benjamin Chu-Kung, Marko Radosavljevic, Seung Hoon Sung +2 more | 2019-06-18 |
| 10249740 | Ge nano wire transistor with GaAs as the sacrificial layer | Willy Rachmady, Matthew V. Metz, Van H. Le, Jack T. Kavalieros | 2019-04-02 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz +8 more | 2019-04-02 |
| 10243069 | Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau | 2019-03-26 |
| 10229991 | III-N epitaxial device structures on free standing silicon mesas | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2019-03-12 |
| 10217673 | Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau +1 more | 2019-02-26 |
| 10211327 | Semiconductor devices with raised doped crystalline structures | Marko Radosavljevic, Sansaptak Dasgupta, Seung Hoon Sung, Han Wui Then, Robert S. Chau | 2019-02-19 |
| 10204989 | Method of fabricating semiconductor structures on dissimilar substrates | Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more | 2019-02-12 |
| 10096474 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more | 2018-10-09 |
| 10096682 | III-N devices in Si trenches | Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more | 2018-10-09 |
| 10096683 | Group III-N transistor on nanoscale template structures | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more | 2018-10-09 |
| 10084043 | High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin | Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +4 more | 2018-09-25 |
| 10056456 | N-channel gallium nitride transistors | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau | 2018-08-21 |
| 10032911 | Wide band gap transistor on non-native semiconductor substrate | Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2018-07-24 |