| 12310060 |
Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerances |
Dan S. LAVRIC, Dax M. Crum, David J. TOWNER, Jitendra Kumar Jha, YenTing CHIU +3 more |
2025-05-20 |
| 12051698 |
Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer |
Daniel G. Ouellette, Daniel B. O'Brien, Jeffrey S. Leib, Lukas Baumgartel, Dan S. LAVRIC +3 more |
2024-07-30 |
| 11996408 |
Leave-behind protective layer having secondary purpose |
Aaron D. Lilak, Anh Phan, Ehren Mannebach, Cheng-Ying Huang, Stephanie A. Bojarski +2 more |
2024-05-28 |
| 11476334 |
Silicide structure of an integrated transistor device and method of providing same |
Joseph M. Steigerwald, Anand S. Murthy, Scott Maddox, Jenny Hu |
2022-10-18 |
| 11348916 |
Leave-behind protective layer having secondary purpose |
Aaron D. Lilak, Anh Phan, Ehren Mannebach, Cheng-Ying Huang, Stephanie A. Bojarski +2 more |
2022-05-31 |