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Home › Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

US Patent 12051698 · Granted Jul 30, 2024

Estimated economic value: $27,313,000 ⓘ

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