CH

Cheng-Ying Huang

IN Intel: 86 patents #267 of 30,777Top 1%
TSMC: 2 patents #6,667 of 12,232Top 55%
📍 Hillsboro, OR: #21 of 2,365 inventorsTop 1%
🗺 Oregon: #270 of 28,073 inventorsTop 1%
Overall (All Time): #18,600 of 4,157,543Top 1%
88
Patents All Time

Issued Patents All Time

Showing 76–88 of 88 patents

Patent #TitleCo-InventorsDate
11164974 Channel layer formed in an art trench Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nancy Zelick, Harold W. Kennel +1 more 2021-11-02
11164747 Group III-V semiconductor devices having asymmetric source and drain structures Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Matthew V. Metz +3 more 2021-11-02
11075198 Stacked transistor architecture having diverse fin geometry Aaron D. Lilak, Gilbert Dewey, Willy Rachmady, Rishabh Mehandru 2021-07-27
11049773 Art trench spacers to enable fin release for non-lattice matched channels Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Tahir Ghani, Anand S. Murthy +4 more 2021-06-29
10892335 Device isolation by fixed charge Sean T. Ma, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber +5 more 2021-01-12
10879365 Transistors with non-vertical gates Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel +3 more 2020-12-29
10861939 Stiff quantum layers to slow and or stop defect propagation Matthew V. Metz, Gilbert Dewey, Harold W. Kennel, Sean T. Ma, Willy Rachmady 2020-12-08
10847619 Supperlatice channel included in a trench Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros 2020-11-24
10734511 High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Benjamin Chu-Kung, Gilbert Dewey +1 more 2020-08-04
10651313 Reduced transistor resistance using doped layer Matthew V. Metz, Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Sean T. Ma 2020-05-12
10644112 Systems, methods and devices for isolation for subfin leakage Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more 2020-05-05
9508849 Device having source/drain regions regrown from un-relaxed silicon layer Clement Hsingjen Wann, Chih-Hsin Ko, Yao-Tsung Huang 2016-11-29
8609518 Re-growing source/drain regions from un-relaxed silicon layer Clement Hsingjen Wann, Chih-Hsin Ko, Yao-Tsung Huang 2013-12-17