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Chip with a silicon carbide substrate |
Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert |
2025-06-10 |
| 11842938 |
Semiconductor device and method for forming a semiconductor device |
Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse +7 more |
2023-12-12 |
| 11798807 |
Process for producing an electrical contact on a silicon carbide substrate |
Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert |
2023-10-24 |
| 11217500 |
Semiconductor device and method for forming a semiconductor device |
Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse +7 more |
2022-01-04 |
| 11195713 |
Methods of forming a silicon-insulator layer and semiconductor device having the same |
Joachim Hirschler, Georg Ehrentraut, Christoffer Erbert, Klaus Goeschl, Markus Heinrici +6 more |
2021-12-07 |
| 11043383 |
Electrical contact connection on silicon carbide substrate |
Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert |
2021-06-22 |
| 10763339 |
Method for manufacturing a semiconductor device having a Schottky contact |
Jens Peter Konrath, Ronny Kern, Ulrich Schmid, Laura Stoeber |
2020-09-01 |
| 10431698 |
Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride |
Jens Peter Konrath, Ronny Kern, Ulrich Schmid, Laura Stoeber |
2019-10-01 |
| 10393697 |
Apparatus for analyzing ion kinetics in dielectrics |
Sabine Gruber, Thomas Aichinger, Thomas Ostermann |
2019-08-27 |
| 10361096 |
Semiconductor component, method for processing a substrate and method for producing a semiconductor component |
Mathias Plappert, Andreas Riegler, Karin Schrettlinger |
2019-07-23 |
| 10199514 |
Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer |
Jens Peter Konrath, Ronny Kern, Ulrich Schmid, Laura Stoeber |
2019-02-05 |
| 9997459 |
Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor device |
Jochen Hilsenbeck, Jens Peter Konrath |
2018-06-12 |
| 9929111 |
Method of manufacturing a layer structure having partially sealed pores |
Martin Mischitz, Markus Heinrici, Barbara Eichinger, Manfred Schneegans |
2018-03-27 |
| 9685347 |
Semiconductor device and method for producing the same |
Jochen Hilsenbeck, Jens Peter Konrath |
2017-06-20 |
| 9660037 |
Semiconductor wafer and method |
Arno Zechmann, Annette Sanger, Ulrike Fastner, Beate Weissnicht |
2017-05-23 |
| 9620466 |
Method of manufacturing an electronic device having a contact pad with partially sealed pores |
Martin Mischitz, Markus Heinrici, Barbara Eichinger, Manfred Schneegans |
2017-04-11 |
| 9599586 |
Ion sensor |
Guenter Schagerl |
2017-03-21 |
| 9595469 |
Semiconductor device and method for producing the same |
Jochen Hilsenbeck, Jens Peter Konrath |
2017-03-14 |
