Issued Patents All Time
Showing 76–87 of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7479683 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2009-01-20 |
| 7456081 | In-place bonding of microstructures | Guy M. Cohen, Patricia M. Mooney | 2008-11-25 |
| 7452767 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2008-11-18 |
| 7446380 | Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS | Nestor A. Bojarczuk, Michael P. Chudzik, Matthew W. Copel, Supratik Guha, Rajarao Jammy +1 more | 2008-11-04 |
| 7436034 | Metal oxynitride as a pFET material | Alessandro C. Callegari, Michael A. Gribelyuk, Vijay Narayanan, Sufi Zafar | 2008-10-14 |
| 7432567 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Barry P. Linder, Vijay Narayanan | 2008-10-07 |
| 7425497 | Introduction of metal impurity to change workfunction of conductive electrodes | Michael P. Chudzik, Bruce B. Doris, Supratik Guha, Rajarao Jammy, Vijay Narayanan +2 more | 2008-09-16 |
| 7368045 | Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow | Philippe M. Vereecken, Veeraraghavan S. Basker, Cyril Cabral, Jr., Emanuel I. Cooper, Hariklia Deligianni +4 more | 2008-05-06 |
| 7271455 | Formation of fully silicided metal gate using dual self-aligned silicide process | Cyril Cabral, Jr., Chester T. Dziobkowski, Sunfei Fang, Evgeni Gousev, Rajarao Jammy +4 more | 2007-09-18 |
| 7242055 | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Martin M. Frank, Evgeni Gousev +4 more | 2007-07-10 |
| 7238589 | In-place bonding of microstructures | Guy M. Cohen, Patricia M. Mooney | 2007-07-03 |
| 7105889 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2006-09-12 |