TA

Thomas N. Adam

IBM: 89 patents #701 of 70,183Top 1%
Globalfoundries: 18 patents #182 of 4,424Top 5%
SF SUNY Research Foundation: 5 patents #46 of 1,165Top 4%
UD University Of Delaware: 3 patents #69 of 660Top 15%
HC Hirschmann Car Communication: 3 patents #5 of 41Top 15%
GU Globalfoundries U.S.: 2 patents #5 of 211Top 3%
MT Matheson Tri-Gas: 1 patents #28 of 47Top 60%
Infineon Technologies Ag: 1 patents #4,439 of 7,486Top 60%
📍 Slingerlands, NY: #5 of 96 inventorsTop 6%
🗺 New York: #401 of 115,490 inventorsTop 1%
Overall (All Time): #10,323 of 4,157,543Top 1%
118
Patents All Time

Issued Patents All Time

Showing 26–50 of 118 patents

Patent #TitleCo-InventorsDate
9281198 Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan 2016-03-08
9257536 FinFET with crystalline insulator Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan 2016-02-09
9236463 Compressive strained III-V complementary metal oxide semiconductor (CMOS) device Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek 2016-01-12
9219139 Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-12-22
9202689 Transistor with improved sigma-shaped embedded stressor and method of formation Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-12-01
9190487 Prevention of fin erosion for semiconductor devices Ali Khakifirooz, Kangguo Cheng, Shom Ponoth, Alexander Reznicek, Raghavasimhan Sreenivasan +2 more 2015-11-17
9190471 Semiconductor structure having a source and a drain with reverse facets Kangguo Cheng, Ali Khakifirooz, Jinghong Li, Alexander Reznicek 2015-11-17
9093564 Integrated passive devices for FinFET technologies Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2015-07-28
9093260 Thin hetereostructure channel device Kangguo Cheng, Hong He, Ali Khakifirooz, Alexander Reznicek 2015-07-28
9087796 Semiconductor fabrication method using stop layer Donald F. Canaperi, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan +1 more 2015-07-21
9087687 Thin heterostructure channel device Kangguo Cheng, Hong He, Ali Khakifirooz, Alexander Reznicek 2015-07-21
9087859 FinFET with enhanced embedded stressor Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-07-21
9087869 Bulk semiconductor fins with self-aligned shallow trench isolation structures Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-07-21
9070771 Bulk finFET with controlled fin height and high-k liner Alexander Reznicek, Kangguo Cheng, Ali Khakifirooz 2015-06-30
9059323 Method of forming fin-field effect transistor (finFET) structure Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-06-16
9059207 Strained channel for depleted channel semiconductor devices Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Davood Shahrjerdi 2015-06-16
9059206 Epitaxial grown extremely shallow extension region Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-06-16
9059139 Raised source/drain and gate portion with dielectric spacer or air gap spacer Kangguo Cheng, Ali Khakifirooz, Juntao Li, Alexander Reznicek 2015-06-16
9059253 Self-aligned contacts for replacement metal gate transistors Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan 2015-06-16
9054218 Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz, Alexander Reznicek 2015-06-09
9053939 Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling David L. Harame, Qizhi Liu, Alexander Reznicek 2015-06-09
9048262 Multi-fin finFETs with merged-fin source/drains and replacement gates Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-06-02
9035391 Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials Alexander Reznicek, Kangguo Cheng, Paul C. Jamison, Ali Khakifirooz 2015-05-19
9035365 Raised source/drain and gate portion with dielectric spacer or air gap spacer Kangguo Cheng, Ali Khakifirooz, Juntao Li, Alexander Reznicek 2015-05-19
9034741 Halo region formation by epitaxial growth Keith E. Fogel, Judson R. Holt, Balasubramanian Pranatharthiharan, Alexander Reznicek 2015-05-19