Issued Patents All Time
Showing 51–75 of 118 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9006789 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-04-14 |
| 8987093 | Multigate finFETs with epitaxially-grown merged source/drains | Eric C. Harley, Judson R. Holt, Alexander Reznicek | 2015-03-24 |
| 8987069 | Semiconductor substrate with multiple SiGe regions having different germanium concentrations by a single epitaxy process | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-03-24 |
| 8981493 | FinFET and method of fabrication | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-03-17 |
| 8975125 | Formation of bulk SiGe fin with dielectric isolation by anodization | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-03-10 |
| 8962434 | Field effect transistors with varying threshold voltages | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-02-24 |
| 8956938 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-02-17 |
| 8946033 | Merged fin finFET with (100) sidewall surfaces and method of making same | Keith E. Fogel, Jinghong Li, Alexander Reznicek | 2015-02-03 |
| 8946064 | Transistor with buried silicon germanium for improved proximity control and optimized recess shape | Judson R. Holt, Alexander Reznicek, Thomas A. Wallner | 2015-02-03 |
| 8921908 | On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substrates | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-12-30 |
| 8916443 | Semiconductor device with epitaxial source/drain facetting provided at the gate edge | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2014-12-23 |
| 8900934 | FinFET devices containing merged epitaxial Fin-containing contact regions | Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Sebastian Naczas, Alexander Reznicek +1 more | 2014-12-02 |
| 8896063 | FinFET devices containing merged epitaxial Fin-containing contact regions | Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Sebastian Naczas, Alexander Reznicek +1 more | 2014-11-25 |
| 8889495 | Semiconductor alloy fin field effect transistor | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-11-18 |
| 8884344 | Self-aligned contacts for replacement metal gate transistors | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2014-11-11 |
| 8877604 | Device structure with increased contact area and reduced gate capacitance | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-11-04 |
| 8872172 | Embedded source/drains with epitaxial oxide underlayer | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2014-10-28 |
| 8866227 | Thin semiconductor-on-insulator MOSFET with co-integrated silicon, silicon germanium and silicon doped with carbon channels | Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek +2 more | 2014-10-21 |
| 8865561 | Back-gated substrate and semiconductor device, and related method of fabrication | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2014-10-21 |
| 8859376 | Transistor with improved sigma-shaped embedded stressor and method of formation | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-10-14 |
| 8853750 | FinFET with enhanced embedded stressor | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-10-07 |
| 8841185 | High density bulk fin capacitor | Ali Khakifirooz, Kangguo Cheng, Alexander Reznicek | 2014-09-23 |
| 8841188 | Bulk finFET with controlled fin height and high-K liner | Alexander Reznicek, Kangguo Cheng, Ali Khakifirooz | 2014-09-23 |
| 8828831 | Epitaxial replacement of a raised source/drain | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-09-09 |
| 8816436 | Method and structure for forming fin resistors | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-08-26 |