| 5465859 |
Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
Jonathan D. Chapple-Sokol, Louis L. Hsu, Chi-Min Yuan |
1995-11-14 |
$11,832,000 |
| 5374590 |
Fabrication and laser deletion of microfuses |
Kerry L. Batdorf, Richard A. Gilmour |
1994-12-20 |
$10,417,000 |
| 5340775 |
Structure and fabrication of SiCr microfuses |
Roy A. Carruthers, Fernand Dorleans, John A. Fitzsimmons, Richard Flitsch, James A. Jubinsky +3 more |
1994-08-23 |
$13,412,000 |
| 5285099 |
SiCr microfuses |
Roy A. Carruthers, Fernand Dorleans, John A. Fitzsimmons, Richard Flitsch, James A. Jubinsky +3 more |
1994-02-08 |
$8,949,000 |
| 5241203 |
Inverse T-gate FET transistor with lightly doped source and drain region |
Louis L. Hsu, Seiki Ogura, Joseph F. Shepard, Jr. |
1993-08-31 |
$6,793,000 |
| 5120668 |
Method of forming an inverse T-gate FET transistor |
Louis L. Hsu, Seiki Ogura, Joseph F. Shepard, Jr. |
1992-06-09 |
$7,952,000 |
| 5015594 |
Process of making BiCMOS devices having closely spaced device regions |
Shao-fu Sanford Chu, San-Mei Ku, Russell C. Lange, Joseph F. Shephard, Wen-Yuan Wang |
1991-05-14 |
$22,168,000 |
| 4960717 |
Fabrication of dielectrically isolated integrated circuit devices |
Victor J. Silvestri |
1990-10-02 |
$14,648,000 |
| 4908691 |
Selective epitaxial growth structure and isolation |
Victor J. Silvestri |
1990-03-13 |
$23,957,000 |
| 4890287 |
On-the-fly error correction |
Bruce E. Johnson |
1989-12-26 |
|
| 4728624 |
Selective epitaxial growth structure and isolation |
Victor J. Silvestri |
1988-03-01 |
$29,571,000 |
| 4583106 |
Fabrication methods for high performance lateral bipolar transistors |
Narasipur G. Anantha, Jacob Riseman |
1986-04-15 |
$21,461,000 |
| 4546536 |
Fabrication methods for high performance lateral bipolar transistors |
Narasipur G. Anantha, Jacob Riseman |
1985-10-15 |
$20,804,000 |
| 4510676 |
Method of fabricating a lateral PNP transistor |
Narasipur G. Anantha, Santosh P. Gaur, Yi-Shiou Huang |
1985-04-16 |
$15,976,000 |
| 4492008 |
Methods for making high performance lateral bipolar transistors |
Narasipur G. Anantha, Tak H. Ning |
1985-01-08 |
$24,317,000 |
| 4442589 |
Method for manufacturing field effect transistors |
Ven Y. Doo |
1984-04-17 |
$34,280,000 |
| 4419809 |
Fabrication process of sub-micrometer channel length MOSFETs |
Jacob Riseman |
1983-12-13 |
$27,725,000 |
| 4403394 |
Formation of bit lines for ram device |
Joseph F. Shepard, Jr. |
1983-09-13 |
$30,642,000 |
| 4392149 |
Bipolar transistor |
Cheng T. Horng, Robert O. Schwenker |
1983-07-05 |
$38,546,000 |
| 4366613 |
Method of fabricating an MOS dynamic RAM with lightly doped drain |
Seiki Ogura |
1983-01-04 |
$36,874,000 |
| 4309812 |
Process for fabricating improved bipolar transistor utilizing selective etching |
Cheng T. Horng, Robert O. Schwenker |
1982-01-12 |
$14,333,000 |
