Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication of dielectrically isolated integrated circuit devices

Fabrication of dielectrically isolated integrated circuit devices

US Patent 4960717 · Granted Oct 2, 1990

Estimated economic value: $14,648,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dual phase and hybrid phase shifting mask fabrication using a surface etch monit1995
Method and apparatus for real-time, in-situ endpoint detection and closed loop e1995
In situ, non-destructive CVD surface monitor1995
Method and apparatus for real-time film surface detection for large area wafers1995
Fabrication and laser deletion of microfuses1994
Structure and fabrication of SiCr microfuses1994
Transistor structure utilizing a deposited epitaxial base region1994
SiCr microfuses1994
Inverse T-gate FET transistor with lightly doped source and drain region1993
Method of producing a thin silicon-on-insulator layer1993
Isolated films using an air dielectric1993
Buried air dielectric isolation of silicon islands1993